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A Study of Semiconductor Quantum Structures by Microwave Modulated Photolumenescence

Published online by Cambridge University Press:  10 February 2011

R. Guliamov ,
E. Lifshitz ,
E. Cohen ,
A. Ron  and
H. Shtrikman
R. Guliamov
Affiliation:
Department of Chemistry and Solid State Institute, Technion, Haifa, 32000, Israel
E. Lifshitz
Affiliation:
Department of Chemistry and Solid State Institute, Technion, Haifa, 32000, Israel
E. Cohen
Affiliation:
Department of Physics and Solid State Institute, Technion, Haifa, 32000, Israel
A. Ron
Affiliation:
Department of Chemistry and Solid State Institute, Technion, Haifa, 32000, Israel
H. Shtrikman
Affiliation:
Department of Condensed Matter Physics, The Weizmann Institute of Science, Rehovot, Israel, [email protected]
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Abstract

Mixed types I - type II multiple quantum wells (QW) structures consist of alternating narrow- and wide GaAs wells, separated by AlAs barriers. Transfer of electrons from the narrow- to the wide well results in the formation of a two-dimensional electron gas (2DEG) in the wide wells and a hole gas (2DHG) in the narrow ones. The present study investigated the effect of these gases on the various photoluminescence (PL) bands. The study utilized two modulations techniques: double beam PL and microwave modulated PL (MMPL), offering high-resolution spectroscopy, control of the 2DEG density and effective temperature. The results showed that the formation of a low density 2DEG in the wide wells cause the formation of trions. However, a large density of excess electrons makes mutual collisions with other photo-generated species, causing the dissociation of the trions and excitons. In addition, electrons transfer through the barrier gives rise to barrier-well indirect recombination emission.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 573: Symposium Z – Compound Semiconductor Surface Passivation and Novel Device.. , 1999 , 119
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. Galbraith, , Dawson, P., Foxon, C.T., Phys.Rev. B45 (23), 13499 (1992).Google Scholar
2. Feldmann, J., Preis, M., Gobel, E.O., Dawson, P., Foxon, C.T., Galbraith, I., Solid State Commun. 83 (3), 245 (1992).Google Scholar
3. Finkelstein, G., Shtrikman, H., Bar-Joseph, I., Phys.Rev. B56 (16), 10326 (1997).Google Scholar
4. Hirler, F., Strenz, R., R.Küchler, Abstreiter, G., Bohm, G., Weimann, G., Surf. Sci. 305, 591 (1994).Google Scholar
5. Manassen, A., Cohen, E., Ron, Arza, Linder, E., Pfeiffer, L.N., Phys.Rev. B54(15), 10609 (1996).Google Scholar
6. Ron, Arza, Yoon, H.W., Sturge, M.D., Manassen, A., Cohen, E., Pfeiffer, L.N., Solid State Commun. 97 (9), 741 (1996).Google Scholar
7. Harel, R., Cohen, E., Linder, E., Ron, Arza, Pfeiffer, L.N., Phys.Rev. B53 (12), 7868 (1996).Google Scholar
8. Manassen, A., Cohen, E., Ron, Arza, Linder, E., Pfeiffer, L.N., Superl.& Microstr. 15 (2), 175 (1994).Google Scholar
9. Manassen, A., Harel, R., Cohen, E., Ron, Arza, Linder, E., Pfeiffer, L.N., Surf. Sci. 361/362, 443 (1996).Google Scholar