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The Study of Seam Line Defects in Silicon-On-Oxide by Merged Epitaxial Lateral Overgrowth

Published online by Cambridge University Press:  15 February 2011

Yangchin Shih ,
J. C. Lou  and
W. G. Oldham
Yangchin Shih
Affiliation:
Electronics Research Laboratory, Department of Materials Science and Mineral Engineering, and Department of Electrical Engineering and Computer Science, University of California at Berkeley, Berkeley CA 94720
J. C. Lou
Affiliation:
Electronics Research Laboratory, Department of Materials Science and Mineral Engineering, and Department of Electrical Engineering and Computer Science, University of California at Berkeley, Berkeley CA 94720
W. G. Oldham
Affiliation:
Electronics Research Laboratory, Department of Materials Science and Mineral Engineering, and Department of Electrical Engineering and Computer Science, University of California at Berkeley, Berkeley CA 94720
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Abstract

Selective Epitaxial Growth of silicon through windows in SiO2 using low-temperature SiH2Cl2/H2 chemistry in a hot wall LPCVD system was used to form Epitaxial Lateral Overgrowth (ELO) regions of Silicon-on-insulator. In cases where pattern ‘width was less than two times epi film thickness, the ELO regions merged to form a continuous epitaxial film. In this study, 2.5 μm thick single crystal silicon layers were grown perfectly over oxide regions with very low dislocation density (< 104/cm2). The epitaxial Si/oxide interfaces were smooth and defect-free. However, a “seam”-like defect was occasionally observed in the epitaxial film on top of the oxide, at the locations where two growth fronts merged together. This crystallographic defect in some case extends through the whole Silicon-on-Oxide film and would be expected to be detrimental to electronic devices built on or close to it. The sturctures of these seam line defects were investigated in detail by transmission electron Microscopy (TEM). The formation mechanisms of these seam line defects and possible origins are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 257
Copyright
Copyright © Materials Research Society 1994

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