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The Study of Oxygen Thermal Donors in Silicon by Photothermal Ionisation Spectroscopy

Published online by Cambridge University Press:  28 February 2011

Jennifer A. Griffin ,
H Navarro  and
L Genzel
Jennifer A. Griffin
Affiliation:
jointly at University of Bath, Bath, Avon, Great Britain.
H Navarro
Affiliation:
Alexander Von Humboldt Stipendiat, on leave from Universidad Autonoma de Puebla, Puebla, Mexico.
L Genzel
Affiliation:
Max Planck Institut für Festkörperforschung, Heisenbergstrasse 1, 7000 Stuttgart 80, Federal Republic of Germany.
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Abstract

It is well known that Czochralski-grown silicon contains up to 2×1018 cm-3 oxygen atoms. When this silicon is annealed at 450°C a series of “thermal” donors are formed. In this work we present the results of a study of annealed Czcochralski-silicon samples by Photothermal Ionisation Spectroscopy and IR transmission measurements. All previously reported thermal donors, which occur in the spectral region above 330cm-1, and hove ionisation energies 53–69.3 meV, are observed by us. Also, our experimental results show the presence of at least three previously unreported thermally formed donor transition series below 330cm-1. Our results indicate that the ionisation energies of these new shallow thermal donors would be 36.3, 37.0 and 37.4 meV. Assignments are made by comparison of the energy differences between excited states to those predicted by the Effective Mass Theory.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 139
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1. Kogan, Sh M and Lifshits, T M, Phys Stat Sol a 39, 11 (1977)CrossRefGoogle Scholar
2. Haller, E E, Hansen, W L, Goulding, F S, IEEE Transactions on Nuclear Science NS–22, 127 (1975)CrossRefGoogle Scholar
3. Haller, E E, McMurray, R E Jr., Physica 116 B, 349 (1983)Google Scholar
4. Skolnick, M S, Eaves, L., Stradling, R A, Solid State Communications 15, 1403 (1974)CrossRefGoogle Scholar
5. Chandler, T C, Spry, R J, Brown, G J, Rome, J J, Phys Rev B 26 (12), 6588 (1982)CrossRefGoogle Scholar
6. Janzén, E, Stedman, R, Grossman, G, Grimmeiss, H G, Phys Rev B 29 (4),1907 (1984)CrossRefGoogle Scholar
7. Wagner, P, Holm, C, Sirtl, E, Oeder, R, Zulehner, W, Festkörperprobleme XXIV Advances is Solid State Physics (Vieweg, Braunschweig, 1984) p191 CrossRefGoogle Scholar
8. Oeder, R and Wagner, P, in Defects in Semiconductors II, MRS Proceedings 14, edited by Mahajan, S and Corbett, J W (North Holland, 1982)Google Scholar
9. Genzel, L, Chandrasekhar, H R, Kuhl, J, Optics Communications 18, 381 (1976)CrossRefGoogle Scholar
10. Ramdas, A K and Rodriguez, S, Rep Prog Phys 44, 1297 (1981)CrossRefGoogle Scholar
11. Navarro, H, Grffin, J, Weber, J, Genzel, L, to be published.Google Scholar
12. Faulkner, R A, Phys Rev 184 713 (1969).CrossRefGoogle Scholar
13. Haller, E E, McMurray, R E Jr., Haegel, N M, Falicov, L M, Proceedings of the XVII International Conference of Semiconductors, edited by Chadi, D J and Harrison, W A (Springer, New York, 1985) p679CrossRefGoogle Scholar
14. Stavola, M, Lee, K M, Nabity, J C, Freeland, P E, Kimerling, L C, Phys Rev Lett 54, 2639 (1985)CrossRefGoogle Scholar
15. Gilmer, T E, Franks, R K, Bell, R J, J Phys Chem Solids 26, 1195 (1965)CrossRefGoogle Scholar
16. Aggarwal, R L, Fisher, P, Mourizine, V, Ramdas, A K, Phys Rev 138, A 882 (1965)CrossRefGoogle Scholar