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A Study of Non-Infrared-Active Hydrogen Bonding in a-Si:H Thin Film using combined Calibrated Temperature Desorption Spectroscopy and FTIR

Published online by Cambridge University Press:  17 March 2011

DJ. Santjojo ,
J.C.L. Cornish  and
M.O.G. Talukder
DJ. Santjojo
Affiliation:
Physics and Energy Studies, Division of Science and Engineering Murdoch University, MURDOCH, WA 6150, AUSTRALIAEmail:[email protected]
J.C.L. Cornish
Affiliation:
Physics and Energy Studies, Division of Science and Engineering Murdoch University, MURDOCH, WA 6150, AUSTRALIA
M.O.G. Talukder
Affiliation:
Physics and Energy Studies, Division of Science and Engineering Murdoch University, MURDOCH, WA 6150, AUSTRALIA
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Abstract

Non-infrared-active hydrogen bonding species were investigated by analyzing the infrared spectra and the calibrated temperature desorption spectroscopy (CTDS) spectra of hydrogen released during degassing of hydrogenated amorphous silicon thin films. Samples were degassed gradually using a linear temperature ramp (0.5°C/s). Each stage corresponds to a temperature at which the hydrogen effusion peaks can be found (~ 340°C, ~ 500°C and ~ 610°C). Differences in the amounts of hydrogen obtained from the FTIR spectra and the CTDS measurement correspond to the non-infrared-active, occluded hydrogen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A26.3
Copyright
Copyright © Materials Research Society 2000

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References

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