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Study of Monocrystalline Structure of GaAs/Si Grown by VPE

Published online by Cambridge University Press:  22 February 2011

Zhang Rong ,
Zheng Youdou ,
Yan Yong ,
Feng Duan  and
Huang Shanxiang
Zhang Rong
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, P.R., China
Zheng Youdou
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, P.R., China
Yan Yong
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, P.R., China National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, P. R., China
Feng Duan
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, P.R., China National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, P. R., China
Huang Shanxiang
Affiliation:
Nanjing Electronic Devices Research Institute, Nanjing 210000, P.R., China
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Abstract

A single crystal GaAs/Si heterostructure has been fabricated using the “two step” version of the traditional halogenide VPE technique. The X-ray diffraction spectroscopy, the high resolution electron microscopy observation and the Raman scattering spectroscopy have been used to analyze the structure of the GaAs epitaxial film on Si, while the X-ray photoelectron energy spectroscopy has been used to determine the chemical structure of the GaAs epilayer. The results indicate that the epilayer is a stoichiometric GaAs single crystal film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 387
Copyright
Copyright © Materials Research Society 1994

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References

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