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A Study of MOCVD-Grown Gallium Nitride Nucleation Layers on Sapphire

Published online by Cambridge University Press:  25 February 2011

A. Estes Wickenden ,
D. K. Wickenden ,
T. J. Kistenmacher ,
S. A. Ecelberger  and
T. O. Poehler
A. Estes Wickenden
Affiliation:
The Johns Hopkins University Applied Physics Laboratory Laurel, MD 20723–6099
D. K. Wickenden
Affiliation:
The Johns Hopkins University Applied Physics Laboratory Laurel, MD 20723–6099
T. J. Kistenmacher
Affiliation:
The Johns Hopkins University Applied Physics Laboratory Laurel, MD 20723–6099
S. A. Ecelberger
Affiliation:
The Johns Hopkins University Applied Physics Laboratory Laurel, MD 20723–6099
T. O. Poehler
Affiliation:
The Johns Hopkins University Applied Physics Laboratory Laurel, MD 20723–6099
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Abstract

Nucleation layers of GaN have been deposited in an MOCVD reactor on (0001) sapphire, over a range of temperatures and layer thicknesses, using either N2 or H2 carrier gas. The layers have been found to be continuous, textured films as deposited at low temperatures (600°C), but to reorder upon annealing, segregating into nucleation sites which exhibit the normal heteroepitaxial relationship with the sapphire substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 355
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

Akasaki, I., Amano, H., Koide, Y., Hiramatsu, K. and Sawaki, N., J. Crystal Growth 98, 209 (1989)CrossRefGoogle Scholar
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