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Study of Medium-Deep Traps in Undoped GaAs Grown by Arsenic-Pressure Controlled Cz Method

Published online by Cambridge University Press:  03 September 2012

Hiroyuki Shiraki ,
Yutaka Tokuda  and
Koichi Sassa
Hiroyuki Shiraki
Affiliation:
Central Research Institute, Mitsubishi Materials Corporation, 1–297 Kitabukuro-cho, Omiya, Saltama, Japan
Yutaka Tokuda
Affiliation:
Department of Electronics, Aichi Institute of Technology, 1247 Yachigusa Yakusa-cho, Toyota, Aichi, Japan
Koichi Sassa
Affiliation:
Compound Semiconductor Center, Mitsubishi Materials Corporation, 1–297 Kitabukuro-cho, Omiya, Saitama, Japan
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Abstract

Properties of medium-deep traps in n-type undoped GaAs crystals grown by arsenic-pressure controlled Czochralski (PCZ) method were studied by using capacitance transient spectroscopy (CTS) and temperature-dependent Hall (TDH) measurement. EL3 and EL6-like (EM2) traps were dominant medium-deep traps in D LTS measurements. The dependence of EM2 peak height on the duration of filling pulse and the detailed analysis of CTS showed that the trap EM2 spectrum consisted of three electron traps which had thermal emission activation energies of approximately 0.35 eV and various capture cross sections with activation energies for electron capture. On the other hand, the trap EL6 spectrum in n-type LEC GaAs was described by two levels of traps with activation energies of 0.32 eV and 0.33 eV for electron emission, respectively. It was concluded that so-called EL6 formed a family and some of its components were classified as defects with large lattice relaxation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 105
Copyright
Copyright © Materials Research Society 1992

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References

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