Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-25T18:04:59.905Z Has data issue: false hasContentIssue false
  • English
  • Français

Study of Magnetic Properties of Cobalt Films Grown on GaAs (110) and Au (111) Substrates Using Ferromagnetic Resonance.

Published online by Cambridge University Press:  25 February 2011

K. L. Hogue ,
C. Kota  and
H. M. Naik
K. L. Hogue
Affiliation:
Department of Physics, Wayne State University, Detroit, MI 48202
C. Kota
Affiliation:
Department of Physics, Wayne State University, Detroit, MI 48202
H. M. Naik
Affiliation:
Department of Physics, Wayne State University, Detroit, MI 48202
Get access

Abstract

Ferromagnetic resonance (FMR) measurements on Co films of thicknesses 10–100 Å grown on GaAs (110) and Au (111) substrates have been made as a function of dc magnetic field orientation in a plane perpendicular to the film. Experimental data were fitted by writing the energy density expression including uniaxial perpendicular anisotropy terms up to second order and bulk anisotropy terms. Co films grown on Au (111) substrates show consistently a higher uniaxial perpendicular anisotropy compared to those grown on GaAs (110) for the same thickness of Co. This is attributed to stress induced anisotropy due to a lattice mismatch between Au (111) and Co layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 238: Symposium Cb – Structure and Properties of Interfaces in Materials , 1991 , 341
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Gradmann, U., J. Mag. Mag. Mat. 54–57, 733, 1986.Google Scholar
2. Heinrich, B., Urquhart, K. B., Arrott, A. S., Cochran, J. F., Myrtle, K. and Purcell, S. T., Pkys. Rev. Lett. 59, 1756, 1987.Google Scholar
3. Prinz, G. A., Rado, G. T. and Krebs, J. J., J. Appl. Phys. 53, 2087, 1982.Google Scholar
4. Chappert, C., LeDang, K., Beauvillain, P., Hurdequint, H. and Renard, D., Phya. Rev. B 34, 3192, 1986.Google Scholar
5. Hicken, R. J., Rado, G. T., Xiao, Gang and Chien, C. L., Phys. Rev. Lett. 64, 1820, 1990.CrossRefGoogle Scholar
6. Krishnan, R., J. Mag. Mag. Mat. 50, 189, 1985.Google Scholar
7. Hurdequint, H., Bennett, W. and Falco, C., ICMFS, 12th LeCreuzot, 1988.Google Scholar
8. He, Hui, Ph.D dissertation, University of Michigan, Ann Arbor, 1990.Google Scholar
9. Prinz, G. A., Phya. Rev. Lett. 54, 1051, 1985.Google Scholar
10. Renard, D. and Nihoul, G., Phil. Mag. B. 55, 75, 1987.Google Scholar
11. Chappert, C. and Bruno, P., J. Appl. Phya. 164, 5736, 1988.Google Scholar
12. Neel, L., J. Phya. Rad. 15, 376, 1954.Google Scholar