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Study of Layer Disordering in MeV Si Implanted GaAs/AlGaAs Superlattices.

Published online by Cambridge University Press:  26 February 2011

Samuel Chen ,
S.-Tong Lee ,
G. Braunstein  and
G. Rajeswaran
Samuel Chen
Affiliation:
Corporate Research Laboratories, Eastman Kodak Company, Rochester, New York 14650.
S.-Tong Lee
Affiliation:
Corporate Research Laboratories, Eastman Kodak Company, Rochester, New York 14650.
G. Braunstein
Affiliation:
Corporate Research Laboratories, Eastman Kodak Company, Rochester, New York 14650.
G. Rajeswaran
Affiliation:
Corporate Research Laboratories, Eastman Kodak Company, Rochester, New York 14650.
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Abstract

Layer intermixing in MeV Si-implanted quantum well superlattices (SLs) has been studied by transmission electron microscopy, secondary ion mass spectrometry and Rutherford backscattering spectroscopy. Molecular beam epitaxially grown GaAs(200Å) - Al0. 5Ga0.5As(200Å) SLs were implanted with 1 MeV Si+ at doses between 3 × 1014 and 1 × 1016/cm2. The implanted SLs were either furnace annealed at 850°C for 3 hr or rapid thermally annealed at 1050°C for 10 sec, both under GaAs proximity capping conditions. Totally mixed regions were observed only for the SLs implanted with 1 × 1016 Si/cm2 and then furnace annealed at 850°C for 3 hr. For the same dose, the RTA annealed SLs only showed slight layer intermixing. At lower doses, no appreciable intermixing was detected in either furnace or RTA annealed samples. By contrast, under either annealing condition extensive intermixing has been demonstrated for lower energy (220 keV) implantation, but at doses almost two orders of magnitude lowerl XTEM showed that in all the annealed samples, a defect-free zone existed in the near-surface region, followed by a band of secondary defects, with the maximum density located at about 1 μm below the surface. In the disordered samples, the position of the intermixed layers correlated with the defect band maximum. Under both annealing conditions, Si concentration profiles only showed slight broadening, and they correlated with the distribution of secondary defects as well as with the depth of the intermixed layers. The effects of dynamic annealing and surface on the implantation energy dependence, i.e., MeV vs. keV, of layer intermixing are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 463
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Coleman, J. J., Dapkus, P. D., Kirkpatrick, C. G., Camras, M. D., and Holonyak, N. Jr, Appl. Phys. Lett. 40, 904 (1982).Google Scholar
2. Mei, P., Yoon, H. W., Venkatesan, T., Schwarz, S. A., and Harbison, J. P., App. Phys. Lett. 50, 1823 (1987).Google Scholar
3. Matsui, K., Kobayashi, J., Fukunaga, T., Ishida, K., and Nakashima, H., Jpn. J. Appl. Phys. 26, L1122 (1987).Google Scholar
4. Gain Electronics Corp., Somerville, NJ.Google Scholar
5. -Tong Lee, S., Braunstein, G., and Samuel Chen, Mater. Res. Soc. Symp. Proc. 126, 183 (1988).Google Scholar
6. Ralston, J., Wicks, G. W.. Eastman, L. F., De Cooman, B. C., and Carter, C. B., J. Appl. Phys. 59, 120 (1986).Google Scholar
7. The sudden change in Al signal at the 38th layer in all the SIMS profiles is due to a decrease of Al concentration during the MBE growth of the SL. Since all the implantation and annealing effects are not centered around this layer, the observed layer intermixing phenomenon is not affected by this grown-in fluctuation of Al content.Google Scholar
8. Tan, T. Y. and Gosele, U., Appl. Phys. Lett. 52, 1240 (1988).Google Scholar
9. Schwarz, S. A., Venkatesan, T., and Mei, P., Mater. Res. Soc. Symp. Proc. 126, 43 (1988).Google Scholar
10. Matsui, K., Kobayashi, J, Fukunaga, T., Ishida, K., and Nakashima, H., Jpn. J. Appl. Phys. 25, L651 (1986).Google Scholar
11. Uematsu, M. and Yanagawa, F., Jpn. J. Appl. Phys. 26, L1407 (1987).Google Scholar
12. -Tong Lee, S. and Fellinger, P., unpublished data (Furnace Annealed, 220 keV Si-Implanted Superlattices).Google Scholar
13. Elliman, R. G., Williams, J. S., Brown, W. L., Leiberich, A., Maher, D. M., and Knoell, R. V., Nucl. Instr. and Meth. B19/20, 435 (1987).CrossRefGoogle Scholar
14. -Tong Lee, S., Braunstein, G., Fellinger, P., Kahen, K. B., and Rajeswaran, G., Appl. Phys. Lett. Oct (1988).Google Scholar
15. Deppe, D. G., Guido, L. J., Holonyak, N. Jr, Hsieh, K. C., Burnham, R. D., Thorton, R. L., and Paoli, T. L., Appl. Phys. Lett. 49, 510 (1986).Google Scholar
16. Chiang, S. Y. and Pearson, G. L., J. Appl. Phys. 46, 2986 (1975).Google Scholar