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A Study of Interdiffusion, Crystallinity, Strain and Thermal Stability of Si1−xGex/Si Created Using Pulsed Laser Induced Epitaxy (PLIE)

Published online by Cambridge University Press:  25 February 2011

K.-Josef Kramer ,
S. Talwar ,
K. H. Weiner  and
T. W. Sigmon
K.-Josef Kramer
Affiliation:
Stanford Electronic Labs, Stanford University, Stanford, CA.94305-4055
S. Talwar
Affiliation:
Stanford Electronic Labs, Stanford University, Stanford, CA.94305-4055
K. H. Weiner
Affiliation:
Lawrence Livermore National Lab, Livermore, CA. 94550
T. W. Sigmon
Affiliation:
Stanford Electronic Labs, Stanford University, Stanford, CA.94305-4055
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Abstract

Heteroepitaxy of Sil−x Gex alloy layers on Si(100) and Si(111) has been achieved using Pulsed Laser Induced Epitaxy (PLIE). The energy of 1-50 pulses from a spatially homogenized XeCl excimer laser is used to melt a structure of electron beam evaporated Germanium on Silicon substrates. On Si(100) substrates alloys with Germanium fractions between 6 and 22% are investigated and exhibit very good crystallinity, as confirmed by MeV-Ion Channeling along the <100> - direction. Heteroepitaxy on Si(l11) yields similar results. MeV-Ion Channeling is also used to determine the level of strain in the layers. This is done by comparing angular yield curves around the <110> - direction for substrate and alloy layer. The obtained strain values are close to calculations for an ideally strained layer state. The strain is also measured for layers that have been subjected to different thermal cycles. As a result of this, predictions of feasibility for subsequent device fabrication can be made for the layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 279
Copyright
Copyright © Materials Research Society 1992

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References

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