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A Study of Increased Resistivity of FTO Back Contact for CZTS Based Absorber Material Grown by Electrodeposition-Annealing Route

Published online by Cambridge University Press:  23 May 2011

Prashant K. Sarswat
Affiliation:
Metallurgical Engineering, University of Utah, Salt Lake City, UT, United States.
Michael L. Free
Affiliation:
Metallurgical Engineering, University of Utah, Salt Lake City, UT, United States.
Ashutosh Tiwari
Affiliation:
Materials science and engineering, University of Utah, Salt Lake City, UT, United States.
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Abstract

CZTS (Copper zinc tin sulfide) thin films have been synthesized on transparent conducting oxide (TCO) back contacts on a glass substrate, allowing sun light to pass through the entire solar cell. Aqueous solution based co-electrodeposition followed by elevated temperature sulfurization, was used to grow CZTS on transparent fluorinated tin oxide. Loss in conductivity of FTO is observed after sulfurization, causing reduced device efficiency. Increased resistivity of the FTO is likely due to outdiffusion process. A systematic study of resistivity of back contact at various sulfurization temperatures and times is discussed. Various remedial measures for improved conductivity of back contact were proposed and conducted.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

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