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The Study of Improving the Conversion Efficiency and Reducing the Thickness of the HIT Solar Cell

Published online by Cambridge University Press:  02 March 2011

Yasuko Hirayama ,
Hirotada Inoue ,
Kenta Matsuyama ,
Yasu umi Tsunomura ,
Daisuke Fujishima ,
Ayumu Yano ,
Shigeharu Taira ,
Takeshi Nishiwaki ,
Toshio Asaumi  and
Toshihiro Kinoshita
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Yasuko Hirayama
Affiliation:
Sanyo Electric Co., Ltd., 7-3-2, Ibukidai-Higashimachi, Nishi-ku,Kobe City, Hyogo, Japan, 651-2242
Hirotada Inoue
Affiliation:
Sanyo Electric Co., Ltd., 7-3-2, Ibukidai-Higashimachi, Nishi-ku,Kobe City, Hyogo, Japan, 651-2242
Kenta Matsuyama
Affiliation:
Sanyo Electric Co., Ltd., 7-3-2, Ibukidai-Higashimachi, Nishi-ku,Kobe City, Hyogo, Japan, 651-2242
Yasu umi Tsunomura
Affiliation:
Sanyo Electric Co., Ltd., 7-3-2, Ibukidai-Higashimachi, Nishi-ku,Kobe City, Hyogo, Japan, 651-2242
Daisuke Fujishima
Affiliation:
Sanyo Electric Co., Ltd., 7-3-2, Ibukidai-Higashimachi, Nishi-ku,Kobe City, Hyogo, Japan, 651-2242
Ayumu Yano
Affiliation:
Sanyo Electric Co., Ltd., 7-3-2, Ibukidai-Higashimachi, Nishi-ku,Kobe City, Hyogo, Japan, 651-2242
Shigeharu Taira
Affiliation:
Sanyo Electric Co., Ltd., 7-3-2, Ibukidai-Higashimachi, Nishi-ku,Kobe City, Hyogo, Japan, 651-2242
Takeshi Nishiwaki
Affiliation:
Sanyo Electric Co., Ltd., 7-3-2, Ibukidai-Higashimachi, Nishi-ku,Kobe City, Hyogo, Japan, 651-2242
Toshio Asaumi
Affiliation:
Sanyo Electric Co., Ltd., 7-3-2, Ibukidai-Higashimachi, Nishi-ku,Kobe City, Hyogo, Japan, 651-2242
Toshihiro Kinoshita
Affiliation:
Sanyo Electric Co., Ltd., 7-3-2, Ibukidai-Higashimachi, Nishi-ku,Kobe City, Hyogo, Japan, 651-2242
Mikio Taguchi
Affiliation:
Sanyo Electric Co., Ltd., 7-3-2, Ibukidai-Higashimachi, Nishi-ku,Kobe City, Hyogo, Japan, 651-2242
Hitoshi Sakata
Affiliation:
Sanyo Electric Co., Ltd., 7-3-2, Ibukidai-Higashimachi, Nishi-ku,Kobe City, Hyogo, Japan, 651-2242
Eiji Maruyama
Affiliation:
Sanyo Electric Co., Ltd., 7-3-2, Ibukidai-Higashimachi, Nishi-ku,Kobe City, Hyogo, Japan, 651-2242
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Abstract

In order to reduce the power-generating cost of silicon solar cells, it is necessary to achieve a high conversion efficiency using a thinner crystalline silicon (c-Si) substrate. The HIT solar cell is an amorphous silicon (a-Si) /crystalline silicon (c-Si) heterojunction solar cell that makes it possible to realize excellent surface passivation and hence high open circuit voltage (Voc). In addition, its symmetrical structure and a low-temperature fabrication process that is under 200°C provide advantages in reducing thermal and mechanical stresses within the device so that it can easily be applied to thinner solar cells. We fabricated HIT solar cells using thin wafers from 58-98 μm, and achieved a 22.8% conversion efficiency with a HIT solar cell using a 98-μm-thick wafer, and an excellent Voc value of 0.747 V with a HIT solar cell using a 58-μm-thick wafer.

Keywords

Sienergy generationphotovoltaic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1288: Symposium G – Novel Fabrication Methods for Electronic Devices , 2011 , mrsf10-1288-g06-09
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

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