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Study of Hf Diffusion in A-Zr using Rutherfdrd Bacckscrttering Spectroscopy

Published online by Cambridge University Press:  25 February 2011

F. Dyment
Affiliation:
Comissi6n Nacianal de Energia fltomica, 1429 Buenos Hires, Argentina
M. Behar
Affiliation:
Instituto de Fisica, UFR65, 91500 Porto fllegre, Brasil
H. Oners
Affiliation:
Comissi6n Nacianal de Energia fltomica, 1429 Buenos Hires, Argentina
P.L. Grande
Affiliation:
Instituto de Fisica, UFR65, 91500 Porto fllegre, Brasil
E. Savino
Affiliation:
Comissi6n Nacianal de Energia fltomica, 1429 Buenos Hires, Argentina
F.C. Zawislak
Affiliation:
Instituto de Fisica, UFR65, 91500 Porto fllegre, Brasil
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Abstract

The present contribution reports on measurements of the diffusion coefficients of Hf in a-Zr via the RBS technique. 250 8 Hf thin films were deposited on two kinds of polycrystalIine Zr samples and annealed in a 773-1115 K temperature range. Our results show that in both cases, the diffusion coefficients follow curved flrrhenius plots. On the other hand for the purest Zr sample we have obtained diffusion coefficients that are systematicaly and significativel ly lower than those corresponding to the Zr sample richer in impurities.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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References

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