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The Study of Fluorinated Amorphous Carbon as Low-K Dielectric Material and its Interface with Copper Metallization

Published online by Cambridge University Press:  10 February 2011

N. Ariel ,
M. Eizenberg  and
E. Y. Tzou
N. Ariel
Affiliation:
Dept of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000, Israel
M. Eizenberg
Affiliation:
Dept of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000, Israel
E. Y. Tzou
Affiliation:
Applied Materials, Santa Clara 95124, CA
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Abstract

In order to achieve better performance of devices, the interconnects RC delay time, the limiting factor of the device speed today, must be reduced. This calls for a new interconnect stack: lower resistivity Copper and low k materials (k<3) as dielectrics.

Fluorinated amorphous carbon (a-F:C) prepared by HDP- CVD is an attractive candidate as a low-k material. In this work we have studied the film, its stability and its interface with Copper metallization. The high density plasma CVD process resulted in a film which contains C and F at a ratio of 1:0.6 as determined by Nuclear Reactions Analysis. XPS analysis of the Cls transition indicated four types of bonds: C-C, C-CF, CF, and CF2. X-ray diffraction as well as high resolution TEM analyses proved that the film was amorphous at least up to 500°C anneal. For various applications, the advantage of adding a thin bi-layer of a-SiC/SiOx for adhesion promotion purposes was demonstrated. In addition, the interface of a-F:C and the adhesion promoter layer with Ta, TaN and Cu was studied. No interdiffusion was observed by SIMS after 400°C annealing. 500°C annealing caused F outdiffusion from the film and Cu diffusion into the adhesion promoter layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 565: Symposium O – Low-Dielectric Constant Materials V , 1999 , 203
Copyright
Copyright © Materials Research Society 1999

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