Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-29T07:28:36.006Z Has data issue: false hasContentIssue false
  • English
  • Français

A Study of Extended Defects in Silicon Crystals After Exposure to a Hydrogen Plasma

Published online by Cambridge University Press:  25 February 2011

Y. L. Chen  and
D. M. Maher
Y. L. Chen
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695–7916
D. M. Maher
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695–7916
Get access

Abstract

The distribution, number density, and nature of extended defects in crystalline silicon which is exposed to plasma-generated atomic hydrogen at a temperature of 250°C are characterized by transmission electron microscopy. Cross-sectional and plan-view modes are used for these characterizations. Extended defects are typically detected in the near surface region of a < 001 > crystal and their number density may exceed 109 defects-cm2, depending on die plasma exposure time, wafer temperature, gas pressure, and power. These defects exhibit contrast features which are characteristic of small dislocation loops (> 50nm in dia) and the nature of their associated strain field is assessed by diffraction-contrast techniques. The relationship between loop-like contrast features and die so-called hydrogen-induced platelet is established by both diffraction-contrast and phase-contrast imaging techniques. The results show that loop-like and platelet-like images exhibit contrast features which are consistent with a compressive strain field and therefore it is concluded that the extended defects in this study are interstitial in nature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 561
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Ma, Yi, Yasuda, T., Habermehl, S., and Lucovsky, G., J. Vac. Sci, Technol. A 10(4), 781 (1992)Google Scholar
2. Chu, W. K., Kastl, R. H., Lever, R. F., Mader, S., and Masters, B.J., in Ion Implantation in Semiconductors. Proceedings of the 5th International Conference on Ion Implantation in Semiconductors and Other Materials. Boulder, Colorado, 1976 (Plenum, New York, 1977), p. 483.Google Scholar
3. Johnson, N. M., Ponce, F.A., Street, R. A., and Nemanich, R. J., Phys. Rev. B, 35, 4166 (1987).Google Scholar
4. Jeng, S. J. and Oehrlein, G. S., Appl. Phys. Lett. 50, 1012 (1987).Google Scholar
5. Ponce, F. A., Johnson, N. M., Tramontana, J. C., and Walker, J., in Microscopy of Semiconducting materials. Instl. Phys. Conf. Ser. No. 87, 49 (1987).Google Scholar
6. Vanhellemeont, J., Claeys, C., and Maes, H. E., in Defect Control in Semiconductors. Proceedings of International Conference on Science and Technology of Defect Control in Semiconductors. Yokohama, Japan, 1989, edited by Sumino, K., (Elsevier, Amsterdam, 1990), p. 501:Google Scholar
Cerva, H. and Strunk, H. P., in Defect Control in Semiconductors. Proceedings of International Conference on Science and Technology of Defect Control in Semiconductors. Yokohama, Japan, 1989, edited by Sumino, K., (Elsevier, Amsterdam, 1990), p. 507.Google Scholar
7. Schneider, T., Bernhard, B. L., Chen, Y. L., and Nemanich, R. J., Mat. Res. Soc. Symp. Proc., Vol. 259 (1992), in press.Google Scholar
8. Zhang, S. B. and Jackson, W. B., Phys. Rev. B, 43, 12 142 (1991).Google Scholar
9. Van de Walle, C. G., Denteneer, P. J. H., Bar-Yam, Y., and Pantelides, S. T., Phys. Rev. B, 39, 10 791 (1989).Google Scholar
10. Deak, P., Ortiz, C. R., Snyder, L. C., and Corbett, J. W., Physica B, 170, 223 (1991).Google Scholar
11. Deak, P. and Snyder, L.C., Radiat. Eff. Defects Solids 111, 77 (1989).Google Scholar
12. Heyman, J. N., Ager, J. W. III, Haller, E. E., Johnson, N. M., Walker, J., and Doland, C. M., Phys. Rev. B, 45, 13 363 (1992).Google Scholar
13. Bell, W. L., and Thomas, G., Phys. Stat. Sol., 12, 843 (1965).Google Scholar
14. Maher, D. M., and Eyre, B. L., Phil. Mag., 23, 409 (1971).Google Scholar
15. Riihle, M., Wilkens, M., and Essmann, U., Phys. Stat. Sol., 11, 819 (1965).Google Scholar