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Study of Epitaxial CoSi2 Grown on (100)Si

Published online by Cambridge University Press:  25 February 2011

M. Lawrence ,
A. Dass ,
David M. Fraser  and
Chih-Shih Wei
M. Lawrence
Affiliation:
Intel Corporation, 3065 Bowers Avenue, Santa Clara, CA 95052.
A. Dass
Affiliation:
Intel Corporation, 3065 Bowers Avenue, Santa Clara, CA 95052.
David M. Fraser
Affiliation:
Intel Corporation, 3065 Bowers Avenue, Santa Clara, CA 95052.
Chih-Shih Wei
Affiliation:
Intel Corporation, 3065 Bowers Avenue, Santa Clara, CA 95052.
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Abstract

A bilayer of CoSi2 covered with TiN on (100)Si has been processed in a nonvacuum environment using a (100)Si wafer deposited with a thin film bilayer of Ti under Co. The Si/CoSi2/TiN stack has been studied using transmission electron microscopy, Rutherfor Backscattering Spectrometry and Auger Electron Spectroscopy. Cross section TEM and RBS studies showed that CoSi2 film is a single crystal and epitaxial with (100)Si. Ledges parallel to (111)Si were also observed at the (100)Si/CoSi2 interface, which was mostly planar. The orientation relationship at Si/CoSi2 interiace, microstructural characteristics of CoSi2 and TiN and the mechanism of 2the reaction are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 193
Copyright
Copyright © Materials Research Society 1991

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References

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