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Study of Diffusion Barriers for PZT Deposited on Si for Non-Volatile Random-Access Memory Technology

Published online by Cambridge University Press:  16 February 2011

Nalin R. Parikh ,
J. Todd Stephen ,
Max L. Swanson  and
Edward R. Myers
Nalin R. Parikh
Affiliation:
Dept. of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599–3255.
J. Todd Stephen
Affiliation:
Dept. of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599–3255.
Max L. Swanson
Affiliation:
Dept. of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599–3255.
Edward R. Myers
Affiliation:
National Semiconductor Corporation, Santa Clara, CA 95052–8090
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Abstract

Thin film ferroelectric structures are being investigated for use as storage capacitors for Non-volatile Random-Access Memories. To integrate ferroelectrics with standard silicon semiconductor processing, a great deal of effort must be spent identifying compatible materials. These materials must be able to withstand both ferroelectric and silicon processing steps involving different temperatures and environments.

In this paper we have used Rutherford backscattering spectrometry (RBS) to study the diffusion of ferroelectric Pb(Zr.5Ti.5)O3 elements into thin films of TiOx, TiNx, ZrNx and ZrOx deposited onto thermally grown SiO2. The sample matrix was annealed at various temperatures in argon ambient and analyzed using 2 MeV He+. Diffusion profiles (concentration vs. depth profiles) of the ferroelectric constituents were determined for the different barrier films. Results indicated that ZrN is the most promising barrier layer so far, having shown the least interdiffusion at 700°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 200: Symposium Y – Ferroelectric Thin Films I , 1990 , 193
Copyright
Copyright © Materials Research Society 1990

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References

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