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Study of Different Phases in a-C:H:N Thin Films Deposited by Plasma- Enhanced Chemical Vapour Deposition: A comparision Between Theoretical and Experimental Data

Published online by Cambridge University Press:  21 March 2011

F. Antoniella
Affiliation:
Materials Research Center, University of Perugia, Loc. Pentima Bassa, 05100 Terni -, Italy
L. Valentini
Affiliation:
Materials Research Center, University of Perugia, Loc. Pentima Bassa, 05100 Terni -, Italy
A. Continenza
Affiliation:
INFM and Dipartimento di Fisica, University of L'Aquila, Via Vetoio 10 Coppito, 67010 - L'Aquila -, Italy
L. Lozzi
Affiliation:
INFM and Dipartimento di Fisica, University of L'Aquila, Via Vetoio 10 Coppito, 67010 - L'Aquila -, Italy
S. Santucci
Affiliation:
INFM and Dipartimento di Fisica, University of L'Aquila, Via Vetoio 10 Coppito, 67010 - L'Aquila -, Italy
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Abstract

The electronic structure of amorphous carbon nitride (a-C:H:N) thin films prepared by radiofrequency (rf) plasma decomposition of CH4/N2 mixture was determined by soft x-ray photoe1ectron spectroscopy by the mean of synchrotron radiation source. On increasing N2 fraction, the valence band shows profound changes. The new features are identified by a comparison of the experimental spectra with theoretically weighted density of the states of graphite and C3N4 structures.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

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