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Study of different Cadmium Telluride Materials doped with V, Zn and Cl grown by vertical Bridgman Furnace and by THM.

Published online by Cambridge University Press:  15 February 2011

Ch. Steer
Affiliation:
CNRS Lab. Phase, F-67037 Strasbourg Cedez, France
L. Chibani
Affiliation:
CNRS Lab. Phase, F-67037 Strasbourg Cedez, France
J.M. Koebel
Affiliation:
CNRS Lab. Phase, F-67037 Strasbourg Cedez, France
M. Hage-Ali
Affiliation:
CNRS Lab. Phase, F-67037 Strasbourg Cedez, France
P. Siffert
Affiliation:
CNRS Lab. Phase, F-67037 Strasbourg Cedez, France
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Abstract

The properties of Cadmium Telluride are very sensitive to impurities. The growth method has also a strong impact on the material characteristics. Crystals grown by THM have good X-ray detector properties, while normal undoped Bridgman grown crystals do not detect. We have grown pure and doped samples by Bridgman and THM methods. As doping materials we used V, Zn and Cl, also in different combinations. The samples were characterized by several methods, including resistivity, TSC and nuclear detection measurements.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

1. Launay, J.C., Mazzoyer, V., Tapiero, M., Zielinger, J.P., Guellil, Z., Delaye, Ph. and Roosen, G., Applied Physics A, 55, 33 (1992).CrossRefGoogle Scholar
2. Partovi, A., Millerd, J. and Garmire, E.M., Appl. Phys. Lett. 57, 846 (1990).CrossRefGoogle Scholar
3. Samimi, M., Biglari, B., Hage-Ali, M. and Siffert, P.,Google Scholar
4. Biglari, B., Samimi, M., Koebel, J.M., Hage-Ali, M. and Siffert, P., Phys.Stat.Sol.(a) 100, 589 (1987).CrossRefGoogle Scholar
5. Chibani, L., Hage-Ali, M., Stoquert, J.P., Koebel, J.M. and Siffert, P., Mat.Sci.Eng.(b) 16, 202 (1993).Google Scholar
6. Samimi, M., Biglari, B., Hage-Ali, M., Koebel, J.M. and Siffert, P., Phys.Stat.Sol.(a) 100, 251(1987).Google Scholar
7. Moravec, P., Hage-Ali, M., Chibani, L. and Siffert, P., Mater.Sci.Eng.(b) 16, 223 (1993).CrossRefGoogle Scholar