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Study of depth-dependent radiation-induced defects using coherent acoustic phonon spectroscopy

Published online by Cambridge University Press:  20 September 2011

A. Steigerwald ,
J. Gregory ,
K. Varga ,
A.B. Hmelo ,
X. Liu ,
J. K. Furdyna ,
L. C. Feldman  and
N. Tolk
A. Steigerwald
Affiliation:
Department of Physics and Astronomy, Vanderbilt University Nashville, TN, 37235
J. Gregory
Affiliation:
Department of Physics and Astronomy, Vanderbilt University Nashville, TN, 37235
K. Varga
Affiliation:
Department of Physics and Astronomy, Vanderbilt University Nashville, TN, 37235
A.B. Hmelo
Affiliation:
Department of Physics and Astronomy, Vanderbilt University Nashville, TN, 37235
X. Liu
Affiliation:
Department of Physics, University of Notre Dame, Notre Dame, Indiana, 46556
J. K. Furdyna
Affiliation:
Department of Physics, University of Notre Dame, Notre Dame, Indiana, 46556
L. C. Feldman
Affiliation:
Department of Physics and Astronomy, Vanderbilt University Nashville, TN, 37235 Institute of Advanced Materials, Devices, and Nanotechnology, Rutgers University, New Brunswick, NJ, 08901
N. Tolk
Affiliation:
Department of Physics and Astronomy, Vanderbilt University Nashville, TN, 37235
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Abstract

Here we study the effect of radiation-induced point defect distributions on the optical reflectivity signal in GaAs using coherent acoustic phonon spectroscopy. We demonstrate that the presence of point defects significantly modifies the optical response, allowing estimation of the depth-dependent defect distribution in a nondestructive and noninvasive manner. We show that the observed changes are dependent on defect-induced changes to the electronic structure, namely defect-induced band tailing of the direct 1.43eV band edge. This provides a method for subsurface investigations on the complex interaction between different defects species and optoelectronic structure.

Keywords

acousticdefectselectronic structure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1363: Symposium RR – Fundamental Science of Defects and Microstructure in Advanced Materials for Energy , 2011 , mrss11-1363-rr02-03
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

[1] Thomsen, C. et al. ., Physical Review Letters 53, 989 (1984).Google Scholar
[2] Thomsen, C. et al. ., Physical Review B 34, 4129 (1986).Google Scholar
[3] Grahn, H. T., Maris, H. J., and Tauc, J., Ieee Journal of Quantum Electronics 25, 2562 (1989).Google Scholar
[4] Grahn, H. T. et al. ., Applied Physics Letters 53, 2023 (1988).Google Scholar
[5] Qi, J. et al. ., Physical Review B 81, 115208 (2010).Google Scholar
[6] Steigerwald, A. et al. ., Applied Physics Letters 94, 111910 (2009).Google Scholar
[7] Scherbakov, A. V. et al. ., Physical Review B 78, 241302 (2008).Google Scholar
[8] Lanzillotti-Kimura, N. D. et al. ., Physical Review Letters 99 (2007).Google Scholar
[9] Akimov, A. V. et al. ., Physical Review Letters 97, 037401 (2006).Google Scholar
[10] Miller, J. K. et al. ., Physical Review B 74 (2006).Google Scholar
[11] Daly, B. C. et al. ., Physical Review B 80, 174112 (2009).Google Scholar
[12] Hao, H. Y., and Maris, H. J., Physical Review B 63, 224301 (2001).Google Scholar
[13] Hao, H. Y., and Maris, H. J., Physical Review Letters 84, 5556 (2000).Google Scholar
[14] Ziegler, J. F., Biersack, J. P., and Littmark, U., The stopping and ranges of ions in solids (Pergammon, New York, 2000).Google Scholar
[15] Brozel, M. R., and Stillman, G. E., Properties of Gallium Arsenide (Institution of Engineering and Technology, 1996).Google Scholar