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The Study of Contamination of Carbon, Boron, and Oxygen in LEC-GaAs

Published online by Cambridge University Press:  25 February 2011

Y. Itoh ,
M. Takai ,
H. Fukushima  and
H. Kirita
Y. Itoh
Affiliation:
The Institute of Physical and Chemical Research, Hirosawa, Wako, Saitama 351-01, Japan
M. Takai
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
H. Fukushima
Affiliation:
Japan Analysis Center, Sannou, Chiba 281, Japan
H. Kirita
Affiliation:
Japan Analysis Center, Sannou, Chiba 281, Japan
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Abstract

Carbon in LEC GaAs was found to be introduced as CO from the ambient atmosphere; the oxygen concentration in the crystals decreased with increase in the duration of melting. An equilibrium segregation coefficient of oxygen in GaAs crystals was found by charged particle activation analysis to be 0.1, the value of which was smaller by a factor of 3~4 than that reported before.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 1001
Copyright
Copyright © Materials Research Society 1990

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