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Study of Coercivity-enhanced Ruthenium-doped La0.67Sr0.33MnO3 Thin Films for Pseudo Spin Valve Devices

Published online by Cambridge University Press:  01 February 2011

Yuk Kwan Chan ,
Wang Fai Cheng ,
Hon Kit Lau  and
Chi Wah Leung
Yuk Kwan Chan
Affiliation:
[email protected], The Hong Kong Polytechnic University, Department of Applied Physics, DE703b, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, Hong Kong, N/A, China, People's Republic of, +85234003256
Wang Fai Cheng
Affiliation:
[email protected], The Hong Kong Polytechnic University, Department of Applied Physics, Hong Kong, N/A, China, People's Republic of
Hon Kit Lau
Affiliation:
[email protected], The Hong Kong Polytechnic University, Department of Applied Physics, Hong Kong, N/A, China, People's Republic of
Chi Wah Leung
Affiliation:
[email protected], The Hong Kong Polytechnic University, Department of Applied Physics, Hong Kong, N/A, China, People's Republic of
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Abstract

This investigation focused on the study of La0.67Sr0.33MnO3 (LSMO) thin films with 5 atomic percent Ru-doping (LSMRO). Specifically, we fabricated epitaxial LSMO and LSMRO thin films on LaAlO3 (LAO) (001) substrates by pulsed laser deposition. Resistance- temperature measurement results showed that the Curie temperature (Tc) of LSMRO thin film deposited under an oxygen ambient pressure of 150 mTorr at 830 °C was above room temperature. Hysteresis measurements and anisotropic magnetoresistance (AMR) results confirmed that coercivity of the optimized LSMRO films, as compared with that of LSMO films, can be greatly increased at low temperatures. The study successfully demonstrated the coercivity enhancement effect of Ru-doping on LSMO thin films deposited on LAO substrates.

Keywords

Ruspintronicmagnetic properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1074: Symposium I – Synthesis and Metrology of Nanoscale Oxides and Thin Films , 2008 , 1074-I03-06
Copyright
Copyright © Materials Research Society 2008

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References

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