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Study of Band Tails in a-SiGe:H Alloys from Time of Flight and Thermally Stimulated Current Experiments

Published online by Cambridge University Press:  25 February 2011

C. Longeaud ,
J. P. Kleider ,
D. Mencaraglia ,
T. Mohammed-Brahim  and
A. Rahal
C. Longeaud
Affiliation:
Laboratoire de Génie Electrique de Paris (URA D0127 CNRS)-Ecole Supérieure d’Electricité-Universités Paris VI et Xl-Plateau du Moulon.91190 Gif/Yvette FRANCE
J. P. Kleider
Affiliation:
Laboratoire de Génie Electrique de Paris (URA D0127 CNRS)-Ecole Supérieure d’Electricité-Universités Paris VI et Xl-Plateau du Moulon.91190 Gif/Yvette FRANCE
D. Mencaraglia
Affiliation:
Laboratoire de Génie Electrique de Paris (URA D0127 CNRS)-Ecole Supérieure d’Electricité-Universités Paris VI et Xl-Plateau du Moulon.91190 Gif/Yvette FRANCE
T. Mohammed-Brahim
Affiliation:
Laboratoire des Couches Minces et Semiconducteurs-Université des Sciences et de la Technologie H. Boumédiene-BP 32, El-Alia Bab Ezzouar, Alger, ALGERIA.
A. Rahal
Affiliation:
Laboratoire des Couches Minces et Semiconducteurs-Université des Sciences et de la Technologie H. Boumédiene-BP 32, El-Alia Bab Ezzouar, Alger, ALGERIA.
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Abstract

Thermally stimulated current (TSC) and Time of flight (TOF) experiments have been performed on the same set of Pt/a-SiGe:H Schottky diodes in order to compare the band tail characteristics obtained from the two methods. For the silicon rich alloys, good agreement is found in the values of the band tail width. However, the values of the attempt-to-escape frequencies obtained from TSC are typically orders of magnitude smaller than those obtained from TOF. To analyse the origin of this discrepancy we propose another kind of TSC experiment denoted Pulsed TSC: short voltage pulses are applied to the sample while it is heated and the resulting current is monitored. Preliminary results are presented and discussed .

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 311
Copyright
Copyright © Materials Research Society 1990

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References

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