Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-25T17:34:32.928Z Has data issue: false hasContentIssue false
  • English
  • Français

Study of annealed Indium Tin Oxide Films Prepared by RF Reactive Magnetron Sputtering

Published online by Cambridge University Press:  21 February 2011

Li-Jian Meng ,
A. Maçarico  and
R. Martins
Li-Jian Meng
Affiliation:
CEMOP/UNINOVA, Quinta de Torre, 2825 Monte da Caparica, Portugal
A. Maçarico
Affiliation:
CEMOP/UNINOVA, Quinta de Torre, 2825 Monte da Caparica, Portugal
R. Martins
Affiliation:
CEMOP/UNINOVA, Quinta de Torre, 2825 Monte da Caparica, Portugal
Get access

Abstract

Tin doped indium oxide (ITO) films were deposited on glass substrates by rf reactive magnetron sputtering using a metallic alloy target (In-Sn, 90-10). the post-deposition annealing has been done for ITO films in air and the effect of annealing temperature on the electrical, optical and structural properties of ITO films was studied. It has been found that the increase of the annealing temperature will improve the film electrical properties. the resistivity of as-deposited film is about 1.3 х 10-1 Ω*cm and decreases down to 6.9 х 10-3Ω*cm as the annealing temperature is increased up to 500 °C. IN addition, the annealing will also increase the film surface roughness which can improve the efficiency of amorphous silicon solar cells by increasing the amount of light trapping.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 388: Symposium Q – Film Synthesis and Growth Using Energetic Beams , 1995 , 379
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

References:

1 Chopra, K.L., Major, S. and Pandya, D.K., Thin Solid Films 102, 1 (1983).Google Scholar
2 Ovadyahu, Z. and Wiesmann, H., J. appl. Phys. 52, 5865 (1981).Google Scholar
3 Tsai, M.J., Fahrenbruch, A.L. and Bube, R.H., J. appl. Phys. 51, 2696 (1980).Google Scholar
4 Karasawa, T. and Miyata, Y., Thin Soild Films 223, 135 (1993).Google Scholar
5 Davis, L., Thin Solid Films 236, 1 (1993).Google Scholar
6 Kawada, A., Thin Solid Films 191, 297 (1990).Google Scholar
7 Gupta, L., Mansingh, A. and Srivastava, P.K., Thin Solid Films 176, 33 (1989).Google Scholar
8 Chaudhuri, S., Bhattacharyya, J. and Pal, A.K., Thin Solid Films 148, 279 (1987).Google Scholar
9 Shigesato, Y. and Paine, D.C., Thin Solid Films 238, 44 (1994).Google Scholar
10 Powder Diffraction File, Joint Committee on Powder Diffraction Standards, (ASTM, Philadelphia, PA, 1967) Card 6–0416.Google Scholar
11 Cullity, B. D., Elements of X-ray Diffraction. 2nd ed. (Addison-wesley, Reading, MA, 1978).Google Scholar
12 Frank, G. and Kostlin, H., Appl. Phys. a, 27, 197 (1982).Google Scholar
13 Weijtens, C.H.L., J. Electrochem. Soc. 138, 3432 (1991).Google Scholar
14 Handbook of X-ray Photoelectron Spectroscopy, edited by Wagner, C. D., Riggs, W.M., Davis, L.E., Moulder, J.F. and Muilenberg, G.E. (Perkin-Elmer, Eden Prairie, MN, 1979).Google Scholar
15 Shigesato, Y., Takaki, S. and Haranoh, T., Appl. Surf. Sci 48/49, 269 (1991).Google Scholar
16 Mizuhashi, M., Thin Solid Films 70, 91 (1980).Google Scholar
17 Curie, D., in Luminescence of Ionrganic Solids, Edited by Di Bartolo, B. (Plenum Press, New York, 1978).Google Scholar
18 Fanderlik, I., Optical Properties of Glass, (Elsevier, Amsterdam, 1983).Google Scholar