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A study of anion exchange reactions at GaAs surfaces for heterojunction interface control

Published online by Cambridge University Press:  01 February 2011

Maria Losurdo ,
Danilo Giuva ,
Pio Capezzuto ,
Giovanni Bruno ,
Terence Brown ,
Greg Triplett ,
Gary May  and
April S. Brown
Maria Losurdo
Affiliation:
Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM, via Orabona 4 – 70126 Bari, Italy
Danilo Giuva
Affiliation:
Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM, via Orabona 4 – 70126 Bari, Italy
Pio Capezzuto
Affiliation:
Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM, via Orabona 4 – 70126 Bari, Italy
Giovanni Bruno
Affiliation:
Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM, via Orabona 4 – 70126 Bari, Italy
Terence Brown
Affiliation:
Georgia Institute of Technology, Microelectronic Research Center, 791 Atlantic Dr, Atlanta, GA, USA
Greg Triplett
Affiliation:
Georgia Institute of Technology, Microelectronic Research Center, 791 Atlantic Dr, Atlanta, GA, USA
Gary May
Affiliation:
Georgia Institute of Technology, Microelectronic Research Center, 791 Atlantic Dr, Atlanta, GA, USA
April S. Brown
Affiliation:
Electronic and Computer Engineering, Duke University, Durham, NC, USA
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Abstract

GaPyAs1-y/GaAs, GaAsySb1-y/GaSb and GaSbyAs1-y/GaAs superlattices (SLs) grown by MBE, by exposure of GaAs to phosphorus and antimonide fluxes, and by exposure of GaSb to an arsenic flux, respectively, have been investigated. The focus is on the abruptness of interfaces and understanding the mechanisms associated with anion incorporation and exchange. In the case of the Sb flux interaction with the GaAs surface, the Sb segregation at the GaAs surface inhibits anion exchange. For the case of As over GaSb reactions, anion exchange results in the formation not only of the ternary alloy GaAsySb1-y, but also of isoelectronic compounds AsSbx that segregate at the GaSb/GaAs interface. In the case of the P flux interfaction with the GaAs surface, fast in-diffusion of P results in graded GaPyAs1-y layer formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 799: Symposium Z – Progress in Compound Semiconductor Materials III - Electronic and Optoelectronic Applications , 2003 , Z2.5
Copyright
Copyright © Materials Research Society 2004

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References

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