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Study of Amorphization Process in Silicon Irradiated by Different Ions Using In Situ Stress-Measurement and TEM Techniques

Published online by Cambridge University Press:  28 February 2011

Jianzhong Yuan ,
Igor V. Verner ,
Sergei K. Maksimov  and
James W. Corbett
Jianzhong Yuan
Affiliation:
The Institute for the Study of Defects in Solids, Department of Physics, State University of New York at Albany, Albany, NY 12222, USA
Igor V. Verner
Affiliation:
The Institute for the Study of Defects in Solids, Department of Physics, State University of New York at Albany, Albany, NY 12222, USA Department of Physics, Moscow Institute of Electronic Technology, 103498 Moscow, K498, Russia.
Sergei K. Maksimov
Affiliation:
Department of Physics, Moscow Institute of Electronic Technology, 103498 Moscow, K498, Russia.
James W. Corbett
Affiliation:
The Institute for the Study of Defects in Solids, Department of Physics, State University of New York at Albany, Albany, NY 12222, USA
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Abstract

Detailed measurements of the stresses induced by implantation of ions of different types, such as light ions: boron and nitrogen, and heavy ions: argon, krypton and xenon, were carried out in situ on thin silicon films. The measurement were made for keV energy of ions, for a wide range of doses and for different values of the dose rate. Experimental results indicate that the ion-beam-induced transformation in silicon is dose-rate dependent for light ions, as well as for heavy ions. The last conclusion contradicts the classical ideas of amorphization of elemental semiconductors by heavy ions that are based on the concepts of a heterogeneous mechanism of formation of the amorphous state during implantation. Heavy-ion implantation behaves similarly with light-ion implantation at a higher sample temperature. A comparison TEM investigation with stress measurement was made. The results indicate that i) the ion-beam-induced deformation correlates with structural changes and ii) both homogeneous and heterogeneous mechanisms are involved in the structural changes. The results are discussed in terms of non-equilibrium phase transitions in silicon under irradiation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 33
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Vemer, I.V. and Tsukanov, V.V., Rod. Eff. and Def. In Sol., 111/112 (1989) 461.Google Scholar
2. Nelson, R.S., in Ion Implantation, ed. Deameley, G., Freemen, J.H., Nelson, R.S. and Stephen, J. (North Holland, 1973) p. 144.Google Scholar
3. Titov, A.I., Christodoulides, C.E., Carter, G. and Nobes, M.J., Rod. Eff., 44 (1979) 107.Google Scholar
4. Yuan, J.Z. and Corbett, J.W., submitted to Rad. Eff.Google Scholar
5. Tetel'baum, D.I., Sov. Phys. Semicond., 17 (1983) 635.Google Scholar
6. Yuan, J.Z. and Corbett, J.W., 22nd NATO Advanced Material Institute, Italy 1991.Google Scholar
7. Volkert, C.A., in Beam-Solid Interactions: Physical Phenomena, MRS Symposia Proceedings, ed. Knapp, J.A., Borgesen, P., and Zuhr, R.A. (MRS, Pittsburgh, PA, 1990), p. 635.Google Scholar
8. Hoffman, R.W., in Physics of Thin Films, ed. Hass, G. and Thun, R.E. (Academic Press, New York, 1966) p. 211.Google Scholar
9. Yuan, J.Z., Verner, I.V., and Corbett, J.W., in present volume of Mater. Res. Soc. Symp., 1991.Google Scholar
10. Smirnov, L.S., Radiation Technology of Semiconductors, ed. Smirnov, L.S. (Nauka, Novosibirsk, 1980) p. 24.Google Scholar
11. Volkert, C.A., J. Appl. Phys. 70(7) (1991) 3521. Google Scholar