Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-29T07:27:46.939Z Has data issue: false hasContentIssue false

Study of Ac Conductivity in Dilute CeO2:Y3+ Ceramics

Published online by Cambridge University Press:  16 February 2011

A.V. Vaysleyb
Affiliation:
Columbia University, School of Mines, Materials Science Division, New York, NY 10027
B.S. Lim
Affiliation:
Columbia University, School of Mines, Materials Science Division, New York, NY 10027
A.S. Nowick
Affiliation:
Columbia University, School of Mines, Materials Science Division, New York, NY 10027
Get access

Abstract

The ac conductivity was studied for different compositions of CeO2 ceramics, undoped and doped with Y3+ ions in the composition range 1 to 12 atomic %Y over the temperature range from 50 K to 500 K. It was observed that in temperature range 300-400 K, the ac conductivity (as well as the real part of the dielectric constant, ε',) follows the universal power-law frequency dependence with exponent s ≈ 0.63. No systematic variation of s, either with temperature or with dopant concentration, was observed, although for nominally “pure” CeO2 no power-law regime was observed. The features of the ac behavior were explained on the basis of a percolation approach.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Long, A.R., Adv. Phys. 31, 553 (1982).Google Scholar
2. Elliott, S.R., Solid State Ionics 90/91, 27 (1994).Google Scholar
3. Funke, K., Prog. in Sol. State Chem. 22, 111 (1993).Google Scholar
4. Angel, C.A., Chem. Rev. 90, 523 (1990).Google Scholar
5. Jonscher, A.K. Dielectric Relaxation in Solids (Chelsea Dielectrics, London 1983)Google Scholar
6. Almond, D.P., Duncan, G.K. and West, A.R., Solid State Ionics 8, 159 (1983).Google Scholar
7. Hunt, A., J. Phys.: Condens. Matter 4, 5371 (1992).Google Scholar
8. Lee, W.K., Lim, B.S., Liu, J. F., and Nowick, A.S., Solid State Ionics 53-56, 831 (1992).Google Scholar
9. Nowick, A.S., Lim, B., and Vaysleyb, A.V., J. Non-Cryst. Solids 172-174, 1243 (1994).Google Scholar
10. Maas, P., Peterson, J., Bunde, A., and Dieterich, W., Phys. Rev. Lett. 66, 52 (1991).Google Scholar
11. Shklovskii, B.I., and Efros, A.L., Electronic Properties of Doped Semiconductors, (Springer-Verlag, Berlin 1984).Google Scholar
12. SNowick, A., in Diffusion in Crystalline Solids edited by Murch, G.E. and Nowick, A.S. (Academic Press Inc., Orlando, 1984) pp. 143188.Google Scholar
13. Ngai, K.L., Comments Solid State Phys. 9, 127 (1979); 9, 141 (1980).Google Scholar
14. Elliott, S.R., Solid State Ionics, 27, 131 (1988).Google Scholar
15. Efros, A.L., and Shklovskii, B.I., Phys. Stat. Sol. B 76, 475 (1976).Google Scholar
16. Webman, I., Jortner, J., and Cohen, M.H., Phys. Rev. B11, 2885 (1975).Google Scholar