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Studies on Titanium Nitride Coatings - Effect of Ion Bombardment

Published online by Cambridge University Press:  17 March 2011

K. Deenamma Vargheese  and
G. Mohan Rao
K. Deenamma Vargheese
Affiliation:
Department of Instrumentation Indian Institute of Science Bangalore, 560012, INDIA
G. Mohan Rao
Affiliation:
Department of Instrumentation Indian Institute of Science Bangalore, 560012, INDIA
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Abstract

Ion bombardment during thin film growth is known to cause structural and morphological changes in the deposited films and thus affecting the film properties. These effects can be due to the variation in the bombarding ion flux or their energy. We have deposited titanium nitride films by two distinctly different methods, viz. Electron Cyclotron Resonance (ECR) plasma sputtering and bias assisted reactive magnetron sputtering. The former represents low energy (typically less than 30 eV) but high density plasma (1011cm−3), whereas, in the latter case the ion energy is controlled by varying the bias to the substrate (typically a few hundred volts) but the ion flux is low (109cm−3). The deposited titanium nitride films are characterized for their structure, grain size, surface roughness and electrical resistivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O11.9
Copyright
Copyright © Materials Research Society 2001

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