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Studies on the Nucleation Behaviors of Precipitation in Aluminum Metallization

Published online by Cambridge University Press:  25 February 2011

Jen-Ren Wang ,
Jian-Yang Lin  and
Huey-Liang Hwang
Jen-Ren Wang
Affiliation:
Department of Electrical Engineering, National Tsing Hua University Hsin-Chu, Taiwan 300, R. O. C.
Jian-Yang Lin
Affiliation:
Department of Electrical Engineering, Chung Cheng Institute of Technology Ta-Shi, Taiwan 335, R. O. C
Huey-Liang Hwang
Affiliation:
Department of Electrical Engineering, National Tsing Hua University Hsin-Chu, Taiwan 300, R. O. C.
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Abstract

In order to simulate the precipitation effect during the aluminum metallization in the VLSI processing, an analytical model was constructed in this work. The nucleation behaviors of the silicon and copper precipitates within the aluminum - 1.0 weight percent silicon - 0.5 weight percent copper were studied. The volume free energies and interfacial energies were estimated, and the activation energy barriers for the precipitate formation were calculated. Silicon precipitate is more likely to nucleate than copper precipitate due to its lower interfacial energy and strain energy. The mechanical and electrical properties of the aluminum interconnects can be improved by the precipitate hardening.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 679
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Pramanik, D. and Saxena, A. N., Solid State Tech., 26(1), (1983), 127.Google Scholar
[2] Pramanik, D. and Saxena, A. N., Solid State Tech., 26(3), (1983), 131.Google Scholar
[3] Learn, A. J., J. Electrochem. Soc, 122, (1975), 1127.Google Scholar
[4] Class, W. H. and Smith, J. F., “VLSI Handbook”, Academic Press. Inc., (1985), 435.Google Scholar
[5] Hoang, H. H. and Fletcher, N. H., Acta Metall., 17, (1969), 1123.Google Scholar
[6] Onuki, J., Koubuchi, Y., Fukada, S., Suwa, M., Misawa, Y. and Itagaki, T., IEDM Tech. Dig., (1988), 454.Google Scholar
[7] Hosda, T., Yagi, H., IEEE Proceedings of IRPS, (1989), 202.Google Scholar
[8] Fischer, F. and Neppl, F., IEEE Proceedings of IRPS, (1984), 190.Google Scholar
[9] Onoda, H., Technical Proceedings, Semicor/Japan, (1990), 290.Google Scholar
[10] Pramanik, D. and Saxena, A. N., Solid State Tech., 33(1), (1990), 73.Google Scholar
[11] Rosenbaum, H. S. and Turnbull, D., Acta Metall., 7, (1959), 664.Google Scholar
[12] Aaronson, H. I., Clark, J. and Laird, C., Met. Sci. J., 2, (1968), 155.Google Scholar
[13] Barnett, D. M., Lee, J. K., Aaronson, H. I., and Russell, K. C., Script Metali., 8, (1974), 1447.Google Scholar