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Studies on Epitaxial Relationship and Interface Structure of AlN/Si(111) and GaN/Si(111) Heterostructures

Published online by Cambridge University Press:  11 February 2011

T. A. Rawdanowicz ,
H. Wang ,
A. Kvit  and
J. Narayan
T. A. Rawdanowicz
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, USA
H. Wang
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, USA
A. Kvit
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, USA
J. Narayan
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, USA
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Abstract

We present the details of epitaxial growth interface structure of single wurtzite AlN thin films on (111) Si substrates by laser-molecular-beam-epitaxy. High quality AlN thin films with atomically sharp interfaces can be obtained by Laser-MBE at a substrate temperature of 650 ±10°C. X-ray diffraction and high resolution transmission electron microscopy was used to study the details of epitaxial growth of AlN on Si(111) substrate. The orientation-relationship of AlN on Si(111) was studied from Si <110> and <112> zone axis and determined to be AlN [2110]|Si[110] and AlN [0110]|Si[211]. The atomic structure of the interface was studied by high-resolution transmission electron microscopy and Fourier filtered image of cross-sectional AlN/Si(111) samples from both Si<110> and <112> zone axis. The results revealed the domain matching epitaxy of 4:5 ratio between the interplanar distances of Si(110) and AlN [2110]. We also present similarities and differences between the growth mechanism of AlN/Si(111) and GaN/Si(111) heterostructures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L3.24
Copyright
Copyright © Materials Research Society 2003

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References

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