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Studies of the Effect of Various Gas Species on Si-SiO2 Interface Charges and Surface Roughness for Rapid Thermal Deposited Gate Oxides

Published online by Cambridge University Press:  10 February 2011

A. M. Bayoumi  and
J. R. Hauser
A. M. Bayoumi
Affiliation:
currently with Hewlett-Packard Laboratories, 3500 Deer Creek Rd., Palo Alto, CA 94304.
J. R. Hauser
Affiliation:
North Carolina State University, Electrical and Computer Engineering, Box 7911, Raleigh, NC 27695.
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Abstract

The formation of Si-SiO2 interfaces for 40–60Å rapid thermal CVD (RTCVD) MOS gate oxides has been studied, using cluster tool technology. SiH4/N2O chemistry is used to deposit stoichiometric oxides. In-situ thermal treatments, prior to oxide deposition, typically at 800–900°C, 30–60 sec, and 50 Torr. are conducted using O2, N2O, SiH4, NH3, HCl/N2 and HCl/O2. The effect of gas flow ratios during temperature ramp-up for RTCVD interface formation is also studied. This paper presents a new quick-turnaround approach for non-destructive evaluation of Si-SiO2 interface quality for fully fabricated devices, in terms of interface charges and surface roughness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 429: Symposium N – Rapid Thermal and Integrated Processing V , 1996 , 213
Copyright
Copyright © Materials Research Society 1996

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