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Studies of the Effect of Rapid Thermal Annealing on the Structural and Electrical Properties of Heteroepitaxial CaF2 /CoSi2 /Si(111) Structures

Published online by Cambridge University Press:  28 February 2011

Julia M. Phillips ,
J. C. Hensel ,
D. C. Joy  and
W. M. Augustyniak
Julia M. Phillips
Affiliation:
AT&T Bell Laboratories Murray Hill, NJ 07974
J. C. Hensel
Affiliation:
AT&T Bell Laboratories Murray Hill, NJ 07974
D. C. Joy
Affiliation:
AT&T Bell Laboratories Murray Hill, NJ 07974
W. M. Augustyniak
Affiliation:
AT&T Bell Laboratories Murray Hill, NJ 07974
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Abstract

We have used electron channeling and scanning electron microscopy to study the crystallinity and morphology of epitaxial CaF2 layers on CoSi2 /Si(111) substrates before and after a rapid thermal anneal. The channeling patterns from the layers after a rapid thermal anneal are nearly indistinguishable from patterns from bulk crystals, indicating high crystalline quality. The annealing procedure also improves the film morphology substantially. We have studied the effect of the rapid thermal anneal on the electrical resistivity of the underlying CoSi2 layer. The room temperature resistivity is unaffected by the anneal, but the low temperature behavior of the resistivity indicates a high degree of diffuse surface scattering, in contrast to as-grown films.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 609
Copyright
Copyright © Materials Research Society 1987

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References

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