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Studies of III-Nitride Superlattice Structures Implanted with Lanthanide Ions

Published online by Cambridge University Press:  01 February 2011

Mohammad Ahmad Ebdah ,
Wojciech M Jadwisienczak ,
Martin E Kordesch ,
Saleem Ramadan ,
Hadis Morkoç  and
A A. Anders
Mohammad Ahmad Ebdah
Affiliation:
[email protected], Ohio University, Department of Physics and astronomy, athens, Ohio, United States
Wojciech M Jadwisienczak
Affiliation:
[email protected], Ohio University, of Electrical Engineering and Computer Science, athens, Ohio, United States
Martin E Kordesch
Affiliation:
[email protected], Ohio University, Physics, Athens, Ohio, United States
Saleem Ramadan
Affiliation:
[email protected], Ohio University, of Electrical Engineering and Computer Science, Athens, Ohio, United States
Hadis Morkoç
Affiliation:
[email protected], Virginia Commonwealth University, Department of Electrical Engineering and Physics Department, Richmond, Virginia, United States
A A. Anders
Affiliation:
[email protected], Lawrence Berkeley National Laboratory, Berkeley, California, United States
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Abstract

Cathodoluminescence (CL) of rare earth (RE) ions implanted AlN/GaN superlattice (SL) structures grown by chemical vapor deposition (CVD) technique on GaN/(0001) sapphire substrate was measured at 10 K and 300 K. Implantation of terbium and thulium in SLs was done at 150 keV with a dose of up to 1×1015 cm-2 at 300 K. Samples were given post implantation isochronal thermal treatment at 900 °C in nitrogen ambient. The interface quality between the SL layers before and after implantation as well as after thermal annealing treatment has been investigated by X-ray diffraction (XRD). The characteristic satellite peaks of the SLs were measured for the (0002) reflection in the symmetric Bragg geometry for the reference, RE-implanted, and annealed SLs. Furthermore, the luminescence intensity of a RE3+ ion doped AlN/GaN SL was compared with the one from RE-implanted GaN epilayers. Despite the structural damage of the AlN/GaN structures, an enhancement of the characteristic emission intensities from RE3+ ions in the SLs was observed compared to emission from RE ions in epilayers.

Keywords

nitrideoptical propertiesTb
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1111: Symposium D – Rare-Earth Doping of Advanced Materials for Photonic Applications , 2008 , 1111-D04-12
Copyright
Copyright © Materials Research Society 2009

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