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Studies of Group III-Nitride Growth on Silicon

Published online by Cambridge University Press:  10 February 2011

AV Blant ,
TS Cheng ,
CT Foxon ,
JC Bussey ,
SV Novikov  and
VV Tret’yakov
AV Blant
Affiliation:
Department of Physics, University of Nottingham, Nottingham, England NG7 2RD.
TS Cheng
Affiliation:
Department of Physics, University of Nottingham, Nottingham, England NG7 2RD.
CT Foxon
Affiliation:
Department of Physics, University of Nottingham, Nottingham, England NG7 2RD.
JC Bussey
Affiliation:
Department of Materials Engineering … Materials Design, University of Nottingham, Nottingham, England, NG7 2RD.
SV Novikov
Affiliation:
Ioffe Physical-Technical Institute, St.Petersburg, 194021, Russia.
VV Tret’yakov
Affiliation:
Ioffe Physical-Technical Institute, St.Petersburg, 194021, Russia.
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Abstract

The growth of Group III-Nitrides on Si substrates offers the possibility of combining optoelectronics with Si technology. We have been studying the growth of Group III-Nitrides on clean and oxidised Si surfaces with a view to local area epitaxy. X-ray data indicates that alloys of (AlGa)N and (InGa)N of controlled composition can be grown on Si using a plasma enhanced Molecular Beam Epitaxy method over the entire composition range from InN to AlN. Films grown on uncleaned, oxidised surfaces of Si are polycrystalline/amorphous in contrast to growth on chemically cleaned Si substrates which show the usual columnar structure common in Group III-Nitrides. XPS studies indicate that there is little tendency for spinodal decomposition, but the In peaks in (InGa)N alloys show that more than one chemical environment is present. The composition of the alloys deduced from electron probe microanalysis studies agree well with those from X-ray measurements, assuming Vegard’s law is valid for both alloy systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 465
Copyright
Copyright © Materials Research Society 1997

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References

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