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Studies of Electrical Current-Induced Liquid Phase Epitaxy of GaMAlXAs:Si

Published online by Cambridge University Press:  26 February 2011

Xian-Fu Zeng ,
Gang-Zhao Yao  and
Zhao-Haon Huang
Xian-Fu Zeng
Affiliation:
Department of Physics, South China Institute of Technology Guangzhou, China
Gang-Zhao Yao
Affiliation:
Department of Physics, South China Institute of Technology Guangzhou, China
Zhao-Haon Huang
Affiliation:
Department of Physics, South China Institute of Technology Guangzhou, China
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Abstract

In this paper, a novel system of electrical current induced liquid phase epitaxial apparatus is presented. Electroepitaxial growths of Ga,-xAlxAs on thin GaAs substrate were carried out at constant temperature with a dc current as the sole driving force. Constant composition Ga1−xAlxAs electroepilayers with mirror-smooth surfaces were obtained. The average rate of epitaxial growth in the system is linearly proportional to the current level passed through the substrate-melt interface. In particular, a new technique of obtaining Ga1−xAlxAs:Si p-n junctions at constant temperatures is presented for the first time: the “step-current” technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 389
Copyright
Copyright © Materials Research Society 1986

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References

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