Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-25T15:31:09.813Z Has data issue: false hasContentIssue false
  • English
  • Français

Studies of Dislocation Formation in Annealed Self-Ion Irradiated Silicon

Published online by Cambridge University Press:  22 February 2011

R. D. Goldberg ,
T. W. Simpson ,
I. V. Mitchell  and
P. J. Schultz.
R. D. Goldberg
Affiliation:
Department of Physics, The University of Western Ontario, London, Ontario, Canada, N6A 3K7.
T. W. Simpson
Affiliation:
Department of Physics, The University of Western Ontario, London, Ontario, Canada, N6A 3K7.
I. V. Mitchell
Affiliation:
Department of Physics, The University of Western Ontario, London, Ontario, Canada, N6A 3K7.
P. J. Schultz.
Affiliation:
Department of Physics, The University of Western Ontario, London, Ontario, Canada, N6A 3K7.
Get access

Abstract

Variable energy positron annihilation and Rutherford backscattering spectroscopy have been used to investigate the evolution of secondary defects during the annealing of self-ion irradiated silicon. Evidence supporting the existence of both vacancy- and interstitially-based defects after high temperature anneals is presented. Dopant type and irradiation temperature have both been shown to influence the structure of the defects whose onset can be manipulated via the implantation flux.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 39
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Schreutelkamp, R. J., Ouster, J. S., Liefting, J. R., Lu, W. X. and Saris, F. W., Mater. Sci. Rep. 6, 277 (1991).Google Scholar
2 Liefting, J. R., PhD thesis, FOM Institute for Atomic and Molecular Physics, Amsterdam.Google Scholar
3 Jones, K. S., Prussin, S. and Weber, E. R., Appl. Phys. A, 45, 1 (1988).Google Scholar
4 Seshan, K. and Washburn, J., Rad. Eff. 37, 147 (1978).Google Scholar
5 Simpson, P. J., Vos, M., Mitchell, I. V., Wu, C. and Schultz, P. J., Phys. Rev. B, 44 (22), 12180 (1991).Google Scholar
6 Tamura, Masao, Appl. Phys. Lett. 23 (12), 651 (1973).Google Scholar
7 Wu, Wei-Kuo and Washburn, Jack, J. Appl. Phys. 48 (10), 3742 (1977).Google Scholar
8 Peter, C. R., de Souza, J. P. and Hasenack, C. M., J. Appl. Phys. 64 (5), 2696 (1988).Google Scholar
9 Huang, J. and Jaccodine, R. J., Rapid Thermal Processing, edited by Sedgwick, T.O., Seidel, T. E. and Tsaur, B-Y. (Mater. Res. Soc. Proc. 52, Pittsburgh, PA, 1986) pp. 57–64.Google Scholar
10 Vos, M., Mitchell, I. V. and Weatherly, G. C., to be published.Google Scholar
11 Feldman, L. C., Mayer, J. W. and Picraux, S. T., Materials Analysis by Ion Channeling, (Academic Press, New York, 1982).Google Scholar
12 Schultz, Peter J. and Lynn, K. G., Rev. of Mod. Phys. 60 (3), 701 (1988).Google Scholar