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Studies of Dislocation Formation in Annealed Self-Ion Irradiated Silicon

Published online by Cambridge University Press:  22 February 2011

R. D. Goldberg ,
T. W. Simpson ,
I. V. Mitchell  and
P. J. Schultz.
R. D. Goldberg
Affiliation:
Department of Physics, The University of Western Ontario, London, Ontario, Canada, N6A 3K7.
T. W. Simpson
Affiliation:
Department of Physics, The University of Western Ontario, London, Ontario, Canada, N6A 3K7.
I. V. Mitchell
Affiliation:
Department of Physics, The University of Western Ontario, London, Ontario, Canada, N6A 3K7.
P. J. Schultz.
Affiliation:
Department of Physics, The University of Western Ontario, London, Ontario, Canada, N6A 3K7.
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Abstract

Variable energy positron annihilation and Rutherford backscattering spectroscopy have been used to investigate the evolution of secondary defects during the annealing of self-ion irradiated silicon. Evidence supporting the existence of both vacancy- and interstitially-based defects after high temperature anneals is presented. Dopant type and irradiation temperature have both been shown to influence the structure of the defects whose onset can be manipulated via the implantation flux.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 39
Copyright
Copyright © Materials Research Society 1994

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References

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