Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-25T15:33:26.483Z Has data issue: false hasContentIssue false
  • English
  • Français

Studies of Diamond Growth Mechanisms in a Hot Filament Reactor

Published online by Cambridge University Press:  26 February 2011

C. Judith Chu ,
Benjamin J. Bai ,
Mark P. D'Evelyn ,
Robert H. Hauge  and
John L. Margrave
C. Judith Chu
Affiliation:
Rice University, Department of Chemistry, P. O. Box 1892, Houston, Texas 77251
Benjamin J. Bai
Affiliation:
Rice University, Department of Chemistry, P. O. Box 1892, Houston, Texas 77251
Mark P. D'Evelyn
Affiliation:
Rice University, Department of Chemistry, P. O. Box 1892, Houston, Texas 77251
Robert H. Hauge
Affiliation:
Rice University, Department of Chemistry, P. O. Box 1892, Houston, Texas 77251
John L. Margrave
Affiliation:
Rice University, Department of Chemistry, P. O. Box 1892, Houston, Texas 77251
Get access

Abstract

The incorporation of methane into low-pressure CVD diamond thin films has been compared to that of acetylene. 13CH4 and 12C2 H2 were used as the hydrocarbon sources in a heated-filament CVD diamond growth process at a total concentration of 0.5% hydrocarbon in 99.5% hydrogen. Results indicated that methane and/or methyl radical is the dominant carbon source for diamond growth in a hot filament reactor under steady state conditions and that acetylene is rapidly hydrogenated to methane. Results also indicated that diamond surface reactions play an important role in determining the relative methane to acetylene ratios.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 85
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Eversole, W. G., U. S. Pat. No. 3030188, Apr. 17, 1962.Google Scholar
2. Deryagin, B. V. and Fedoseev, D. B., Sci. Am., 233(5), 102–109, 1975.Google Scholar
3. Angus, J. C., Will, H. A., and Stanko, W. S., J. Appl. Phys., 39, 2915–22, 1968.Google Scholar
4. Poferl, D. J., Gardner, N. C., and Angus, J. C., J. Appl. Phys., 44(4), 1428–34, 1973.Google Scholar
5. Chauhan, S. P., Angus, J. C., and Gardner, N. C., J. Appl. Phys., 47(11), 4746–54, 1976.Google Scholar
6. Celii, F. G., Pehrsson, P. E., Wang, H. T., and Butler, J. E., Appl. Phys. Lett., 52(24), 2043–45, 1988.Google Scholar
7. Butler, J. E., Celii, F. G., Oakes, D. B., Hanssen, L. M., Carrington, W. A., and Snail, K. A., “Studies of Diamond Chemical Vapor Deposition”, in press, High Temperature Science, 1989.Google Scholar
8. Franklach, M. and Spear, K. E., J. Mater. Res., 3(1), 133–40, 1988.Google Scholar
9. Huang, D., Frenklach, M., and Maroncelli, M., J. Phys. Chem., 92, 6379, 1988.Google Scholar
10. Tsuda, M., Nakajima, M., and Oikawa, S., J. Am. Chem. Soc., 108, 5780–5783, 1986.Google Scholar
11.. Chu, C. J., D'Evelyn, M. P., Hauge, R. H., and Margrave, J. L., “Carbon-13 Diamond Thin Films”, to be published.Google Scholar