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Studies of Bulk Materials for Thermoelectric Cooling

Published online by Cambridge University Press:  15 February 2011

Jeff W. Sharp
Affiliation:
Marlow Industries, Inc., 10451 Vista Park Rd., Dallas, TX 75238–1645
George S. Nolas
Affiliation:
Marlow Industries, Inc., 10451 Vista Park Rd., Dallas, TX 75238–1645
Edward H. Volckmann
Affiliation:
Marlow Industries, Inc., 10451 Vista Park Rd., Dallas, TX 75238–1645
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Abstract

We discuss ongoing work in three areas of thermoelectric materials research: 1) broad band semiconductors featuring anion networks, 2) filled skutterudites, and 3) polycrystalline Bi-Sb alloys. Key results include: a preliminary evaluation of a previously untested ternary semiconductor, KSnSb; the first reported data in which Sn is used as a charge compensator in filled antimonide skutterudites; the finding that Sn doping does not effect polycrystalline Bi1−xSbx as it does single crystal samples.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

1. Deller, K. and Eisenmann, B., Z. Naturfor. B 33, p. 676 (1978).Google Scholar
2. Moffatt's Handbook of Binary Phase Diagrams, edited by Westbrook, J. H. (Genium, Schenectady, 1995).Google Scholar
3. Pearson's Handbook of Crystallographic Data for Intermetallic Phases, Villars, P. and Calvert, L.D. (Amer. Soc. Metals, Metals Park, OH, 1985), pp. 14131414.Google Scholar
4. Lii, K. H. and Haushalter, R. C., J. Sol. St. Chem. 67, p. 374 (1987).Google Scholar
5. Schmidt, P. C., Stahl, D., Eisenmann, B., Kniep, R., Eyert, V. and Kübler, J., J. Sol. St. Chem. 97, p. 93 (1992).Google Scholar
6. Goldsmid, H. J. and Sharp, J. W., in preparation.Google Scholar
7. Caillat, T., Borshchevsky, A. and Fleurial, J.-P., J. Appl. Phys. 80, p. 4442 (1996).Google Scholar
8. Slack, G.A., in CRC Handbook of Thermoelectrics, edited by Rowe, D.M. (CRC Press, Boca Raton, FL, 1995), p. 407.Google Scholar
9. Slack, G.A. and Tsoukala, V.G., J. Appl. Phys. 76, p. 1665 (1994).Google Scholar
10. Evers, C.B.H, Jeitschko, W., Boonk, L., Braun, D.J., Ebel, T., Scholz, U.D., J. Alloys Comp. 224, p. 184 (1995), and references therein.Google Scholar
11. Nolas, G.S., Slack, G.A., Morelli, D.T., Tritt, T.M. and Ehrlich, A.C., J. Appl. Phys. 79, p. 4002 (1996),Google Scholar
12. Slack, G.A., in SolidState Physics, edited by Ehrenreich, H., Seitz, F., and Turnbull, D. (Academic Press, New York, 1979), Vol.34, p. 1.Google Scholar
13. Singh, D.J., private communication.Google Scholar
14. Tritt, T.M., Nolas, G.S., Slack, G.A., Morelli, D.T., Ehrlich, A.C., Gillespie, D.J., and Cohen, J.L., J. Appl. Phys. 79, p. 8412 (1996).Google Scholar
15. Dudkin, L. D., Sov. Phys. Tech. Phys. 3, p. 216 (1958).Google Scholar
16. King, R.B., Inorg. Chem. 23, p. 3048 (1988).Google Scholar
17. Sales, B.C., Mandrus, D.G., and Williams, R.K., Science 272, p. 1325 (1996).Google Scholar
18. Chen, B., Xu, J., Uher, C., Morelli, D.T., Meisner, G.P., Fleurial, J.-P., Caillat, T., and Borshchevsky, A., Phys. Rev. B 55, p. 1476 (1997).Google Scholar
19. Horst, R. B. and Williams, L. R., Proc. Internatl. Conf Thermoelectrics III, Arlington, TX, p. 139 (1980).Google Scholar
20. Jandl, P. and Birkholz, U., J. Appl. Phys. 76, p. 7351 (1994).Google Scholar
21. Harman, T. C., J. Appl. Phys. 29, p. 1373 (1958).Google Scholar