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Studies of an InAs/GaAs Heterojunction by Total-Electron-Yield

Published online by Cambridge University Press:  21 February 2011

A. Krol ,
C. J. Sher ,
D. R. Storch ,
S. C. Woronick ,
L. Krebs ,
Y. H. Kao  and
L. L. Chang
A. Krol
Affiliation:
Department of Physics, State University of New York at Stony Brook, Stony Brook, NY 11794
C. J. Sher
Affiliation:
Department of Physics, State University of New York at Stony Brook, Stony Brook, NY 11794
D. R. Storch
Affiliation:
Department of Physics, State University of New York at Stony Brook, Stony Brook, NY 11794
S. C. Woronick
Affiliation:
Department of Physics, State University of New York at Stony Brook, Stony Brook, NY 11794
L. Krebs
Affiliation:
Department of Physics, State University of New York at Stony Brook, Stony Brook, NY 11794
Y. H. Kao
Affiliation:
Department of Physics, State University of New York at Stony Brook, Stony Brook, NY 11794
L. L. Chang
Affiliation:
IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
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Abstract

Total electron yield (TEY) of an InAs/GaAs heterojunction due to soft x-ray excitation has been studied. This heterojunction was prepared by an overgrowth of a 600 Å InAs layer on a GaAs substrate using molecular beam epitaxy. Experimental data are compared with theoretical analysis based on a modified Fresnel formulation to calculate the wave field distribution in stratified media with interfacial roughness. The TEY angular profiles obtained at a given x-ray energy reveal information on the interfacial roughness, secondary electron escape length, attenuation length of elastically scattered photo-electrons, and optical constants of the epilayer in the xray regime.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 143: Symposium V – Synchrotron Radiation in Materials Research , 1988 , 25
Copyright
Copyright © Materials Research Society 1989

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References

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