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The Structures of Tantalum Pentoxide Film Formed by Reactive DC Magnetron Sputter-Deposition of Ta

Published online by Cambridge University Press:  25 February 2011

P.-H. Chang ,
J. G. Bohlman ,
H. Y. Liu ,
J. A. Keenan ,
B. W. Shen  and
I.-C. Chen
P.-H. Chang
Affiliation:
Central Research Laboratories, P.O. Box 655936, MS 132, Texas Instruments Inc., Dallas, TX 75265
J. G. Bohlman
Affiliation:
Semiconductor Process and Design Center, P.O. Box 655621, MS 944, Texas Instruments Inc, Dallas, TX 75265
H. Y. Liu
Affiliation:
Central Research Laboratories, P.O. Box 655936, MS 132, Texas Instruments Inc., Dallas, TX 75265
J. A. Keenan
Affiliation:
Central Research Laboratories, P.O. Box 655936, MS 132, Texas Instruments Inc., Dallas, TX 75265
B. W. Shen
Affiliation:
Semiconductor Process and Design Center, P.O. Box 655621, MS 944, Texas Instruments Inc, Dallas, TX 75265
I.-C. Chen
Affiliation:
Semiconductor Process and Design Center, P.O. Box 655621, MS 944, Texas Instruments Inc, Dallas, TX 75265
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Abstract

Tantalum pentoxide (Ta2O5) films are candidates for application as storage capacitors in high density memory cells and as gate insulators in MOS devices because of their large dielectric constant. Thin Ta2O5 films deposited by reactive DC magnetron sputtering of a pure Ta target using an argon/oxygen mixture have been characterized using TEM, glancing angle X-ray diffraction and RBS. The films are amorphous in the as-deposited condition but crystallize after high temperature (> 600 °C) annealing. Numerous pores and significant grain boundary grooving were observed in the crystallized film. A high level (∼2 at. %) of argon was detected in both as-deposited and annealed films formed by Ar/O2 sputtering. The effects of sputtering and annealing conditions on the structure of the films were investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 121: Symposium H – Better Ceramics Through Chemistry III , 1988 , 549
Copyright
Copyright © Materials Research Society 1988

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References

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