Hostname: page-component-78c5997874-94fs2 Total loading time: 0 Render date: 2024-11-05T04:13:56.228Z Has data issue: false hasContentIssue false
  • English
  • Français

Structure-Property Relationships in Semiconductor Alloys

Published online by Cambridge University Press:  25 February 2011

A. Sher ,
M. A. Berding ,
S. Krishnamurthy ,
M. Van Schilfgaarde ,
A.-B. Chen  and
W. Chen
A. Sher
Affiliation:
SRI International, Menlo Park, CA 94025
M. A. Berding
Affiliation:
SRI International, Menlo Park, CA 94025
S. Krishnamurthy
Affiliation:
SRI International, Menlo Park, CA 94025
M. Van Schilfgaarde
Affiliation:
SRI International, Menlo Park, CA 94025
A.-B. Chen
Affiliation:
Auburn University, Auburn, AL 36849
W. Chen
Affiliation:
Auburn University, Auburn, AL 36849
Get access

Abstract

We have demonstrated that the atomic distribution of constituents in semiconductor alloys is never truly random. There are always interactions causing correlations; the degree and nature of the correlations depend on which interactions dominate and on the growth conditions. While we have identified most of the interactions which are expected to cause correlations, not all of them have been treated completely to date. Therefore, some details remain unclear, but the principal effects can now be appreciated in broad terms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 90: Symposium R – Materials for Infrared Detectors and Sources , 1986 , 91
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Chen, A.-B. and Sher, A., Mat. Res. Symp. Proc., 46, 137 (1985).Google Scholar
Chen, A.-B. and Sher, A., Phys. Rev., B 32, 3695 (1985).CrossRefGoogle Scholar
3. Sher, A., Chen, A.-B., and van Schilfgaarde, M., J. Vac. Sci. Technol., A 4, 1965 (1986).CrossRefGoogle Scholar
4. Detailed calculation will be published in J. Appl. Phys.Google Scholar
5. van Schilfgaarde, M., Chen, A.-B., Sher, A., Phys. Rev. Lett., 57, 1149 (1986).Google Scholar
6. Guggenheim, E.A., Mixtures, (Oxford at the Clarendon Press, London, 1952).Google Scholar
7. Kuan, T.S., Kuech, T.F., Wang, W.I., and Wilkie, E.L., Phys. Rev. Lett., 54, 201 (1985).Google Scholar
8. Czyzyk, M.T., Podgorny, M., Balzarotti, A., Lelardi, P., Motta, N., Kisiel, A., and Zemnal-Slamawska, M., Z. Phys. B-Cond. Matter, 62, 153 (1986).CrossRefGoogle Scholar
9. Srivastava, G.P., Martins, J.L., and Zunger, A., Phys. Rev. B, 31, 2561 (1985).Google Scholar
10. Bevk, J., Mannaerts, J.P., Feldman, L.C., and Davidson, B.A., Appl. Phys. Lett., 49, 286 (1986).Google Scholar
11. Green, J.E., J. Vac. Sci. Technol. B, 1, 229 (1983).CrossRefGoogle Scholar
12. Bicknell, R.N., Giles, N.C., Schetzina, J.F., Appl. Phys. Lett., 49, 1095 (1986).CrossRefGoogle Scholar