Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-25T15:16:15.550Z Has data issue: false hasContentIssue false
  • English
  • Français

Structure Of Twin Boundaries In Silicon

Published online by Cambridge University Press:  15 February 2011

C. Fontaine  and
D.A. Smith
C. Fontaine
Affiliation:
IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, N.Y. 10598, USA.
D.A. Smith
Affiliation:
IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, N.Y. 10598, USA.
Get access

Abstract

Grain boundaries exert a profound influence on the electrical behavior of semiconductors. First order twin boundaries are the simplest and most common interfaces which occur in polysilicon. We have studied the dislocation structure and preferred boundary plane orientation of such twins by transmission electron microscopy. In addition, we have investigated the atomic structure of twin boundaries on {111} and {112} planes using an interference technique which permits the relative position of two lattices to be determined with a precision of about 0.05Å. Knowing the relative orientation and position of two crystals, together with the interface plane, permits the atomic configuration at the interface to be inferred. We find that the interface structure is surprisingly complex and that more than one atomic configuration is possible for a given grain orientation and interface plane. It is therefore not unexpected that even twin boundaries can show variations in electrical properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 5: Symposium B – Grain Boundaries in Semiconductors , 1981 , 39
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Smith, D.A., Rae, C.M.F. and Grovenor, C.R.M. in “Grain Boundary Structure and Kinetics, ASM, Metals Park, Ohio, 337–371.Google Scholar
2. Wada, Y. and Nishimitsu, S., J. Electrochem, Soc. 125, 1499 (1978).Google Scholar
3. Mei, L., Rivier, M., Kwart, Y. and Dutton, R.W., in Semiconductor Silicon, Huff, H., Kriegler, R.J. and Takeishi, Y., eds. (Electrochemical Society, Inc., Pennington, N.J.) pp 1007–1015.Google Scholar
4. Patel, J.R. and Chaudhuri, A.R., Phys. Rev. 143, 601, (1966).Google Scholar
5. Balluffi, R.W., Komem, Y., and Schober, T., Surf. Sci. 31, 68 (1972).Google Scholar
6. Guan, D.Y. and Sass, S.L., Phil. Mag. A39, 293, (1979).Google Scholar
7. Carter, C.B., Foell, H., Ast, D.G. and Sass, S.L., Phil. Mag. A 43, 441, (1981).Google Scholar
8. Bacmann, J.J., Silvestre, G. and Petit, M., Phil. Mag. A43, 189, (1981).Google Scholar
9. Sun, C.P. and Balluffi, R.W., Scripta Met., 13, 757, (1979).Google Scholar
10. Pond, R.C. and Smith, D.A., Grain Boundaries in Engineering Materials, Walter, J.L., Westbrook, J.H. and Woodford, D.A., eds. (Claitors, Baton Rouge) pp. 309–318.Google Scholar
11. Hornstra, J., Physica, 26, 198, (1960).Google Scholar
12. Rae, C.M.F. and Smith, D.A., Phil. Mag. A41, 477, (1980).Google Scholar
13. Hirsch, P.B., Defects in Semiconductors, Narayan, J. and Tan, T.Y., eds, (North Holland, New York) pp257–271.Google Scholar
14. Hornstra, J., J. Phys. Chem. Solids 5, 129, (1958).Google Scholar
15. Turnbull, D., Trans. Met. Soc. AIME, 191, 661, (1951).Google Scholar
16. Mandurah, M.M., Saraswat, K.C., Helms, C.R. and Kamins, T.I., J. Appl. Phys. 51, 5755 (1981).Google Scholar