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Structure of the 2H-Ain/6H-SiC Interface

Published online by Cambridge University Press:  15 February 2011

P. Vermaut ,
P. Ruterana ,
G. Nouet  and
H. Morkoç
P. Vermaut
Affiliation:
Lermat Ura CNRS N° 1317, ISMRA;, 6 Blvd du Maréchal Juin, 14050 Caen Cedex, France, [email protected] fr
P. Ruterana
Affiliation:
Lermat Ura CNRS N° 1317, ISMRA;, 6 Blvd du Maréchal Juin, 14050 Caen Cedex, France, [email protected] fr
G. Nouet
Affiliation:
Lermat Ura CNRS N° 1317, ISMRA;, 6 Blvd du Maréchal Juin, 14050 Caen Cedex, France, [email protected] fr
H. Morkoç
Affiliation:
University of Illinois, Materials Research Laboratory, Urbana, Illinois, IL 61801 USA
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Abstract

Steps at the AIN/SiC interface have been investigated by HREM. Some of them do not introduce any defects. Others steps present a dislocation character which can contribute to relieve the strain due to the lattice mismatch. A third kind of steps gives rise to a prismatic planar fault for which a model is given. A reaction between prismatic and basal stacking faults is analyzed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 551
Copyright
Copyright © Materials Research Society 1996

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