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The Structure of Surface Steps on Low-Index Planes of Oxides.

Published online by Cambridge University Press:  28 February 2011

D.W. Susnitzky ,
Y. Kouh Simpson ,
B.C. De Cooman  and
C.B. Carter
D.W. Susnitzky
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853.
Y. Kouh Simpson
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853.
B.C. De Cooman
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853.
C.B. Carter
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853.
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Abstract

Surface steps have been observed on low-index planes of alpha-alumina and spinel. The steps were produced by annealing both bulk and perforated thin foil single crystals. A comparative study of bright-field TEM and dark-field REM of the same crystals makes it possible to construct models for the surface structure. Many faceted steps can be observed on the (0001), {0112}, {1010} and {1120} surfaces of alpha-alumina and on the {100} surface of spinel. A detailed study of step faceting and step facet movement during reheating is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 60: Symposium L – Defect Properties and Processing of High-Technology Nonmetallic Materials , 1985 , 219
Copyright
Copyright © Materials Research Society 1986

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References

1. Chang, C.C., J.Appl.Phys. 39 (12), 5570 (1968).Google Scholar
2. Baik, S., Fowler, D.E., Blakely, J.M. and Raj, R., J. Amer. Ceram. Soc. 68 (5), 281 (1985).CrossRefGoogle Scholar
3. Iijima, Sumio, Ultramicroscopy 6, 41 (1981).CrossRefGoogle Scholar
4. Hsu, Tung, Iijima, Sumio and Cowley, J.M., Surf. Sci. 137, 551 (1984).CrossRefGoogle Scholar
5. De Cooman, B.C., Kuesters, K.-H., Carter, C.B., Hsu, Tung and Wicks, G., Phil. Mag. A 50 (6), 849 (1984).Google Scholar
6. Morrissey, K.J., Czanderna, K.K., Carter, C.B. and Merrill, R.P., J.Amer.Ceram. Soc. 67 (5), C-88 (1984).Google Scholar
7. Cowley, J.M., Proc. Mat. Res. Soc. 31, 177 (1984).Google Scholar
8. Kouh Simpson, Y. and Carter, C.B., Phil. Mag. Lett., in press.Google Scholar
9. Susnitzky, D.W. and Carter, C.B., J. Amer. Ceram. Soc., in press.Google Scholar
10. Morrissey, K.J. and Carter, C.B., J. Amer. Ceram. Soc. 67 (4), 292 (1984).CrossRefGoogle Scholar
11. Cullen, G.W., in Heteroepitaxial Semiconductors for Electronic Devices, edited by Cullen, G.W. and Wang, C.C. (Springer-Verlag, New York, 1979), pp.21–31.Google Scholar
12. Schmidt, W.A. and Davey, J.E., NBS Special Publication 348, 259 (1972).Google Scholar
13. De Cooman, B.C. and Carter, C.B., Phil. Mag. A 51 (2), 175 (1985).Google Scholar
14. Hsu, Tung, Ultramicroscopy 11, 167 (1983).Google Scholar
15. Cowley, J.M. and Peng, L., Ultramicroscopy 16, 59 (1985).CrossRefGoogle Scholar