Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-27T02:09:11.801Z Has data issue: false hasContentIssue false
  • English
  • Français

The Structure of Ion-Implanted Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

J. M. Gibson ,
J-Y. Cheng ,
P. Voyles ,
M.M.J. TREACY  and
D.C. Jacobson
J. M. Gibson
Affiliation:
University of Illinois, Department of Physics, 1110 W. Green St, Urbana, IL 61801
J-Y. Cheng
Affiliation:
University of Illinois, Department of Physics, 1110 W. Green St, Urbana, IL 61801
P. Voyles
Affiliation:
University of Illinois, Department of Physics, 1110 W. Green St, Urbana, IL 61801
M.M.J. TREACY
Affiliation:
NEC Research Institute, 4 Independence Way, Princeton NJ 08540
D.C. Jacobson
Affiliation:
Lucent Bell Laboratories, 600 Mountain Avenue, Murray Hill NJ 07974
Get access

Abstract

Using fluctuation microscopy, we show that ion-implanted amorphous silicon has more medium-range order than is expected from the continuous random network model. From our previous work on evaporated and sputtered amorphous silicon, we conclude that the structure is paracrystalline, i.e. it possesses crystalline-like order which decays with distance from any point. The observation might pose an explanation for the large heat of relaxation that is evolved by ion-implanted amorphous semiconductors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 540: Symposium N / Microstructural Processes in Irradiated Materials , 1998 , 27
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Gibson, J M and Treacy, M M J, Phys. Rev. Lett. 78 (6 (Feb. 10th)), 1074–1077 (1997).Google Scholar
2 Treacy, M M J and Gibson, J M, Acta Crystallogr. A52 (2), 212–20 (1996).Google Scholar
3 Treacy, M.M.J. and Gibson, J.M., J. Non-Cryst. Solids 231, 99–110 (1998).Google Scholar
4 Gibson, J.M., Treacy, M.M.J., Voyles, P.M.et al, Appl. Phys. Letts. 73 (21), 3093 (1998).Google Scholar
5 Donovan, E.P., Spaepen, F., Poate, J.M. and Jacobson, D.C., Appl. Phys. Lett. 55, 1516 (1989).Google Scholar
6 DeAvillez, R.R., Clevenger, L.A. and Thomson, C.V., J. Mat. Res. 5, 1057 (1989).Google Scholar
7 Roorda, S., Poate, J.M., Jacobson, D.C. et al. , Appl. Phys. Lett. 56, 2097 (1990).Google Scholar