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Structure of Highly Perfect Semiconductor Strained-Layer Superlattices: High-Resolution X-Ray Diffraction and Computer Simulation Studies

Published online by Cambridge University Press:  28 February 2011

J. M. Vandenberg
J. M. Vandenberg*
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

High-resolution x-ray diffraction (HRXRD) measurements of strained-layer superlattices (SLS's) have been carried out using a four-crystal monochromator. A wide asymmetric range of sharp higher-order x-ray satellite peaks is observed indicating well-defined periodic structures. Using a kinematical diffraction step model very good agreement between measured and simulated x-ray satellite patterns could be achieved. These results show that this x-ray method is a powerful tool to evaluate the crystal quality of SLS's.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 455
Copyright
Copyright © Materials Research Society 1989

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References

1. Vandenberg, J. M., Hamm, R. A., Panish, M. B. and Temkin, H., J. Appl. Phys. 62, 1278 (1987).CrossRefGoogle Scholar
2. Bartels, W. J., J. Vac. Sci. Technol. B1, 338 (1983).CrossRefGoogle Scholar
3. Vandenberg, J. M., Chu, S. N. G., Hamm, R. A., Panish, M. B. and Temkin, H., Appl. Phys. Lett. 49, 1302 (1986).CrossRefGoogle Scholar
4. Vandenberg, J. M., Panish, M. B. and Hamm, R. A., Mat. Res. Soc. Symp. Proc. 103, 79 (1988).CrossRefGoogle Scholar
5. Panish, M. B., Temkin, H. and Sumski, S., J. Vac. Sci. Tec BS, h., 657 (1985).Google Scholar
6. Segmiiller, A. and Blakeslee, A. E., J. Appl. Cryst. 6, 19 (1973).CrossRefGoogle Scholar
7. McWhan, D. B., Gurvitch, M., Rowell, J. M. and Walker, L. R., J. Appl. Phys. 54, 3886 (1983).CrossRefGoogle Scholar
8. Hornstra, J. and Bartels, W. J., J. Cryst. Growth 44, 513 (1978).CrossRefGoogle Scholar
9. Vandenberg, J. M., Bean, J. C., Hamm, R. A. and Hull, R., Appl. Phys. Lett. 52, 1152 (1988).CrossRefGoogle Scholar