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The Structure of GaAs Grown by Chemical Beam Epitaxy on Low-Temperature Cleaned Silicon

Published online by Cambridge University Press:  25 February 2011

Y. R. Xing ,
C. J. Kiely  and
P. J. Goodhew
Y. R. Xing
Affiliation:
Department of Materials Science and Engineering, The University of Liverpool, P.O. Box 147, Liverpool L69 3BX, England
C. J. Kiely
Affiliation:
Department of Materials Science and Engineering, The University of Liverpool, P.O. Box 147, Liverpool L69 3BX, England
P. J. Goodhew
Affiliation:
Department of Materials Science and Engineering, The University of Liverpool, P.O. Box 147, Liverpool L69 3BX, England
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Abstract

Chemical beam epitaxy (CBE) has been used to grow GaAs on silicon with a low defect density after etching in HF followed by a low temperature (600°C) in situ heat treatment. High resolution electron microscopy (HREM) and convergent beam electron diffraction (CBED) studies show the presence of 90° and 60° dislocations and some inversion domains.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 333
Copyright
Copyright © Materials Research Society 1993

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References

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