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Structure Effect on Electrical Properties of Ito Films Prepared by Rf Reactive Magnetron Sputtering

Published online by Cambridge University Press:  10 February 2011

Li-Jian Meng  and
M. P. dos Santos
Li-Jian Meng
Affiliation:
Departamento de Física, Instituto Superior de Engenharia do Porto, Rua de São Tomé, 4200 Porto, Portugal, [email protected]
M. P. dos Santos
Affiliation:
Departamento de Fisica, Universidade do Minho, 4710 Braga, Portugal
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Abstract

ITO films have been deposited onto glass substrates by rf reactive magnetron sputtering using In-Sn (90–10) alloy target. After the deposition, the films were annealed in air at 500 °C for 30, 60, 90 and 180 min respectively. The film structure varies as the annealing time is changed. The film electrical properties show a strongly dependence on the film structure. Although all the films show a preferred orientation along the (400) direction, the film which has high (222) diffraction peak intensity, has high carrier mobility and low resistivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 426: Symposium J – Thin Films for Photovoltaic and Related Device , 1996 , 431
Copyright
Copyright © Materials Research Society 1996

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