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Structure and Properties of C-Axis Oriented AlN Films Reactively Deposited by DC Planar Magnetron Sputtering

Published online by Cambridge University Press:  21 February 2011

Takakazu Takahashi ,
Fumio Takeda  and
Masahiko Naoe
Takakazu Takahashi
Affiliation:
Toyama University, 3190 Gofuku, Toyama, 930, JAPAN
Fumio Takeda
Affiliation:
Toyama Technical College, 13 Hongoh-machi, Toyama, 930-11, JAPAN
Masahiko Naoe
Affiliation:
Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo, 152, JAPAN
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Abstract

Aluminum nitride (AlN) films have been deposited by reactive DC planar magnetron sputtering at a low substrate temperature of 80°C. An Al disk and either N2 or NH3 were used as a target and an ambient gas, respectively. In films deposited in N2, the c-axis of AlN crystallites was perpendicular to the film plane. On the other hand, in NH3, X-ray diffraction peaks from (100), (110) and (200) were observed. The surface and the cross-sectional microstructures of AlN films deposited in N2 were significantly different from that deposited in NH3. The surface of films deposited in NH3 was smoother than that deposited in N2. The transmittivity of films deposited in NH3 was superior to that deposited in N2 in wavelength of 275∼450 nm. Resistivities of films deposited in N2 and in NH3 were 1014sim;1015 Ω · cm. Dielectric constants of films deposited in N2, and of that deposited in NH3, were 9.7, and 9, respectively, in a frequency range of 20 kHz to 20 MHz. The structure and the properties of AlN films deposited by this method depended on kind of ambient gas.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 167: Symposium K – Advanced Electronic Packaging Materials , 1989 , 277
Copyright
Copyright © Materials Research Society 1990

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