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Structure and Numerical Simulation of Field Effect Solar Cell

Published online by Cambridge University Press:  10 February 2011

H. Koinuma ,
H. Fujioka ,
C. Hu ,
T. Koida  and
M. Kawasaki
H. Koinuma
Affiliation:
Research Laboratory of Engineering Materials Tokyo Institute of Technology, Yokohama, 4259 Japan
H. Fujioka
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA94720
C. Hu
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA94720
T. Koida
Affiliation:
Research Laboratory of Engineering Materials Tokyo Institute of Technology, Yokohama, 4259 Japan
M. Kawasaki
Affiliation:
Research Laboratory of Engineering Materials Tokyo Institute of Technology, Yokohama, 4259 Japan
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Abstract

A p-i-n a-Si:H solar cell structure which can eliminate detrimental effect of TCO and a heavily doped window layer has been investigated in detail using a two-dimensional device simulator. The cell is designed to use an inversion layer induced by field effect instead of the heavily doped window layer while maintaining p-i-n junction locally to keep the built-in potential high and stable. Device simulation has revealed that the conversion efficiency of p-in a-Si:H solar cells can be improved by 30% with the use of this cell structure. This improvement is mainly due to the increase in the photo-currents, which can be explained by the increased quantum efficiency for light with short wavelength.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 426: Symposium J – Thin Films for Photovoltaic and Related Device , 1996 , 95
Copyright
Copyright © Materials Research Society 1996

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References

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